Demonstration of a Thin-Film Lithium Niobate Modulator With Integrated Bias Controllers

• Published in: IEEE photonics technology letters Vol. 37; no. 20; pp. 1201 - 1204
• Main Authors: Zhao, Guanbao, Zhang, Jiao, Zhu, Min, Peng, Luohan, Xiao, Jinbiao
• Format: Journal Article
• Language: English
• Published: New York IEEE 15.10.2025; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bias; Bias controller; Circuits; half-wave voltage; heterogeneous integration; Lithium niobates; Modulation; Modulators; MOSFET; Optical device fabrication; Optical distortion; Optical feedback; Optical films; Optical waveguides; phase point; photonics; pyroelectric; Resistance; Thin films; Voltage control
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2025.3585706

To enhance the portability and stability of the thin-film lithium niobate modulator (TFLNM) under different working conditions, an integrated bias controller is proposed and demonstrated based on multi-physics simulation modeling algorithms and heterogeneous integration strategies. A new transmission formula with higher accuracy is enabled according to the integrated device. Theoretical analysis results show the fabricated devices have a bandwidth over 110 GHz. Experimental results show the device can operate stably for 3500 hours online at 110 GHz, with mere 0.01°C phase point drift. Notably, the Transmitter and Dispersion Eye Closure for PAM4 (TDECQ) achieves 1.91 dB. To our knowledge, this is currently the best-performance electro-optic hybrid integrated TFLNM, which is suitable for large-scale network calculation.