Identical Pulse With Opposite Polarity Assistance Detrapping-Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

• Published in: IEEE transactions on electron devices Vol. 71; no. 12; pp. 7437 - 7441
• Main Authors: Lou, Z.-F., Liao, C.-Y., Hsiang, K.-Y., Li, Z.-H., Chang, S.-H., Chen, T.-C., Lee, M. H
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Analog circuits; Artificial neural networks; Circuit design; Coercivity; Deep neural network (DNN); detrapping; Electrons; FeFETs; ferroelectric FET (FeFET); Iron; Linearity; Logic gates; Polarity; Rapid thermal annealing; Switches; synapse; Synapses; Trajectory; Trapped charge
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2024.3480054

A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity (<inline-formula> <tex-math notation="LaTeX">\alpha _{P} =0.07 </tex-math></inline-formula>) and applicable conductance ratio (<inline-formula> <tex-math notation="LaTeX">{G}_{\text {Max}} </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">{G}_{\min } </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">\Delta {G} </tex-math></inline-formula>) >16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design.