Emission wavelength dependence of characteristic temperature of InGaN laser diodes

We have determined thermal stability of various InGaN laser diodes emitting in the spectral range of 390-436 nm. Their characteristic temperature T0 increases steeply with the increasing emission wavelength, reaching the value of around 230 K. Our analysis of current-light characteristics and activa...

Full description

Saved in:
Bibliographic Details
Published inApplied physics letters Vol. 103; no. 7
Main Authors Bojarska, Agata, Goss, Jakub, Marona, Łucja, Kafar, Anna, Stańczyk, Szymon, Makarowa, Irina, Najda, Stephen, Targowski, Grzegorz, Suski, Tadek, Perlin, Piotr
Format Journal Article
LanguageEnglish
Published 12.08.2013
Online AccessGet full text
ISSN0003-6951
1077-3118
DOI10.1063/1.4818576

Cover

More Information
Summary:We have determined thermal stability of various InGaN laser diodes emitting in the spectral range of 390-436 nm. Their characteristic temperature T0 increases steeply with the increasing emission wavelength, reaching the value of around 230 K. Our analysis of current-light characteristics and activation energy of electroluminescence proves that this behavior is predominantly related to the thermal escape of electrons from quantum wells, which depends critically on their depth.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4818576