韩郑生, 闫. 高. 李. 赵. 曾. 罗. (2017). Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET. Chinese physics B, 26(9), 520-525. https://doi.org/10.1088/1674-1056/26/9/098505
Chicago Style (17th ed.) Citation韩郑生, 闫薇薇 高林春 李晓静 赵发展 曾传滨 罗家俊. "Experimental and Simulation Studies of Single-event Transient in Partially Depleted SOI MOSFET." Chinese Physics B 26, no. 9 (2017): 520-525. https://doi.org/10.1088/1674-1056/26/9/098505.
MLA (9th ed.) Citation韩郑生, 闫薇薇 高林春 李晓静 赵发展 曾传滨 罗家俊. "Experimental and Simulation Studies of Single-event Transient in Partially Depleted SOI MOSFET." Chinese Physics B, vol. 26, no. 9, 2017, pp. 520-525, https://doi.org/10.1088/1674-1056/26/9/098505.
Warning: These citations may not always be 100% accurate.