Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

In this study, we investigate the single-event transient（SET） characteristics of a partially depleted silicon-on-insulator（PDSOI） metal-oxide-semiconductor（MOS） device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-...

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Published inChinese physics B Vol. 26; no. 9; pp. 520 - 525
Main Author 闫薇薇 高林春 李晓静 赵发展 曾传滨 罗家俊 韩郑生
Format Journal Article
LanguageEnglish
Published 01.08.2017
Subjects
MOSFET
SOI器件
单事件
实验
模拟
瞬态电流
绝缘体上硅
金属氧化物半导体
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/9/098505

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Summary:In this study, we investigate the single-event transient（SET） characteristics of a partially depleted silicon-on-insulator（PDSOI） metal-oxide-semiconductor（MOS） device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor（p-BJT） effect by performing both a laser test and simulations.
Bibliography:single-event transient pulsed laser parasitic bipolar junction transistor partially depleted silicon on insulator
In this study, we investigate the single-event transient（SET） characteristics of a partially depleted silicon-on-insulator（PDSOI） metal-oxide-semiconductor（MOS） device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor（p-BJT） effect by performing both a laser test and simulations.
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/9/098505