Ion Photon Emission Microscope for Single Event Effect Testing in CIAE

Ion photon emission microscopy (IPEM) is a new ion-induced emission microscopy. It employs a broad ion beam with high energy and low fluence rate impinging on a sample. The position of a single ion is detected by an optical system with objective lens, prism, microscope tube and charge coupled device...

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Published inChinese physics letters Vol. 34; no. 7; pp. 71 - 75
Main Author 张艳文 郭刚 刘建成 史淑廷 覃英参 李丽丽 贺林峰
Format Journal Article
LanguageEnglish
Published 01.06.2017
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/34/7/073401

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Summary:Ion photon emission microscopy (IPEM) is a new ion-induced emission microscopy. It employs a broad ion beam with high energy and low fluence rate impinging on a sample. The position of a single ion is detected by an optical system with objective lens, prism, microscope tube and charge coupled device (CCD). A thin ZnS film doped with Ag ions is used as a luminescent material. Generation efficiency and transmission efficiency of photons in the ZnS(Ag) film created by irradiated Cl ions are calculated. A single Cl ion optical microscopic image is observed by high quantum efficiency CCD. The resolution of a single Cl ion given in this IPEM system is 6μm. Several factors influencing the resolution are discussed. A silicon diode is used to collect the electrical signals caused by the incident ions. Effective and accidental coincidence of optical images and electronic signals are illustrated. A two-dimensional map of single event effect is drawn out according to the data of effective coincidence.
Bibliography:11-1959/O4
Ion photon emission microscopy (IPEM) is a new ion-induced emission microscopy. It employs a broad ion beam with high energy and low fluence rate impinging on a sample. The position of a single ion is detected by an optical system with objective lens, prism, microscope tube and charge coupled device (CCD). A thin ZnS film doped with Ag ions is used as a luminescent material. Generation efficiency and transmission efficiency of photons in the ZnS(Ag) film created by irradiated Cl ions are calculated. A single Cl ion optical microscopic image is observed by high quantum efficiency CCD. The resolution of a single Cl ion given in this IPEM system is 6μm. Several factors influencing the resolution are discussed. A silicon diode is used to collect the electrical signals caused by the incident ions. Effective and accidental coincidence of optical images and electronic signals are illustrated. A two-dimensional map of single event effect is drawn out according to the data of effective coincidence.
Yan-Wen Zhang, Gang Guo, Jian-Cheng Liu,Shu-Ting Shi, Ying-Can Qin, Li-Li Li, Lin-Feng He(Department of Nuclear Physics, China Institute of Atomic Energy, Beijing 102413)
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/34/7/073401