Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers

A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer（CBL）, respec...

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Published inChinese physics B Vol. 24; no. 9; pp. 464 - 467
Main Author 马莉 沈光地 高志远 徐晨
Format Journal Article
LanguageEnglish
Published 01.09.2015
Subjects
AlGaInP
功率LED
发光二极管
基础
增强性能
电极电流密度
肖特基
阻挡层
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/24/9/097202

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Abstract A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer（CBL）, respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.
AbstractList A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer（CBL）, respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.
Author 马莉 沈光地 高志远 徐晨
AuthorAffiliation Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China
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Cites_doi 10.1109/2944.999187
10.1016/j.sse.2004.07.014
10.1088/0268-1242/15/1/312
10.1049/el:19951520
10.1063/1.1403665
10.1063/1.3529470
10.1109/JDT.2012.2227054
10.1117/12.768607
10.1063/1.103736
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Notes A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer（CBL）, respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.
11-5639/O4
light-emitting diodes,Schottky current blocking layer,current spreading
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Snippet A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and...
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SubjectTerms AlGaInP
功率LED
发光二极管
基础
增强性能
电极电流密度
肖特基
阻挡层
Title Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers
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