Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers

A new epitaxial structure of AlGaInP-based light-emitting diode(LED) with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide(ITO) and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer(CBL), respec...

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Bibliographic Details
Published inChinese physics B Vol. 24; no. 9; pp. 464 - 467
Main Author 马莉 沈光地 高志远 徐晨
Format Journal Article
LanguageEnglish
Published 01.09.2015
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/24/9/097202

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Summary:A new epitaxial structure of AlGaInP-based light-emitting diode(LED) with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide(ITO) and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer(CBL), respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.
Bibliography:A new epitaxial structure of AlGaInP-based light-emitting diode(LED) with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide(ITO) and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer(CBL), respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.
11-5639/O4
light-emitting diodes,Schottky current blocking layer,current spreading
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/24/9/097202