Defect Rescue Method for Microprocessor, Using Bonding Technology with Ar Atom Bombardment
This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI...
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| Published in | QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY Vol. 16; no. 2; pp. 264 - 271 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | Japanese |
| Published |
JAPAN WELDING SOCIETY
1998
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0288-4771 2434-8252 |
| DOI | 10.2207/qjjws.16.264 |
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| Abstract | This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI film is bonded to a substrate. The irradiation does not cause electrical damage to the device. Although the clean surfaces are quickly re-contaminated after the irradiation, the LSI can be bonded at low temperature and under light pressure. The joints have a few voids at the interface, but the mechanical and their thermal properties are good enough for electronic devices. This new joining technology offers the possibility of developing a defect rescue method for active device transfer. |
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| AbstractList | This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI film is bonded to a substrate. The irradiation does not cause electrical damage to the device. Although the clean surfaces are quickly re-contaminated after the irradiation, the LSI can be bonded at low temperature and under light pressure. The joints have a few voids at the interface, but the mechanical and their thermal properties are good enough for electronic devices. This new joining technology offers the possibility of developing a defect rescue method for active device transfer. |
| Author | TASE, Takashi TOKUDA, Masahide KOHNO, Akiomi HORINO, Masaya SASAKI, Yasuhiko USAMI, Mitsuo |
| Author_xml | – sequence: 1 fullname: USAMI, Mitsuo organization: Hitachi, Ltd., Central Research Laboratory – sequence: 1 fullname: KOHNO, Akiomi organization: Hitachi, Ltd., Mechanical Engineering Research Laboratory – sequence: 1 fullname: HORINO, Masaya organization: Hitachi, Ltd., Mechanical Engineering Research Laboratory – sequence: 1 fullname: TASE, Takashi organization: Hitachi, Ltd., Central Research Laboratory – sequence: 1 fullname: TOKUDA, Masahide organization: Hitachi, Ltd., Central Research Laboratory – sequence: 1 fullname: SASAKI, Yasuhiko organization: Hitachi, Ltd., Mechanical Engineering Research Laboratory |
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| References | 7) 梶原,高橋,加藤他,"Au及びCu膜への表面活性化による常温超音波ボールボンディング"溶接学会全国大会講演概要集, 52 (1993) 196. 5) T. Suga, K. Miyazawa and Y. Yamagata, "Direct Bonding of Ceramics and Metals by Means of a Surface Activation Method in Ultrahigh Vacuum," Mat. Res. Soc. Int'l. Mtg. on Adv. Mats. 8 (1989) 252. 6) 河野,堀野,田口,"低温接合技術の開発",溶接技術, 5 (1989) 74. 10) T. Nishikawa, M. Ijuin, R. Satoh et al. "Fluxless Soldering Process Technology," IEEE (1994) 286. 8) J.M.E. Harper, H.L. Yeh and K.R. Grebe, "Ion beam joining Technique," J. Vac. Sci. Tech. 20, 3 (1982) 359. 9) 堀野,河野,佐原他,"フラックスレスはんだ接続プロセス技術",溶接学会全国大会講演概要集, 49 (1991) 396. 1) 宇佐美他5名:超高密度Si接合技術によるマイクロプロセッサの欠陥救済方法,電子情報通信学会秋季大会講演概要, 1996. 9. 2) J.ルーゲ,"固相接合機構について"溶接学会誌, 47, 7(1978) 402. 4) 加柴,町田,奥田,"超高真空常温界面接合装置の開発"溶接技術, 7 (1987) 88. 3) D.V. Keller, "Adhesion between Solid Metals", Wear 6 (1963) 353. |
| References_xml | – reference: 2) J.ルーゲ,"固相接合機構について"溶接学会誌, 47, 7(1978) 402. – reference: 8) J.M.E. Harper, H.L. Yeh and K.R. Grebe, "Ion beam joining Technique," J. Vac. Sci. Tech. 20, 3 (1982) 359. – reference: 4) 加柴,町田,奥田,"超高真空常温界面接合装置の開発"溶接技術, 7 (1987) 88. – reference: 5) T. Suga, K. Miyazawa and Y. Yamagata, "Direct Bonding of Ceramics and Metals by Means of a Surface Activation Method in Ultrahigh Vacuum," Mat. Res. Soc. Int'l. Mtg. on Adv. Mats. 8 (1989) 252. – reference: 3) D.V. Keller, "Adhesion between Solid Metals", Wear 6 (1963) 353. – reference: 1) 宇佐美他5名:超高密度Si接合技術によるマイクロプロセッサの欠陥救済方法,電子情報通信学会秋季大会講演概要, 1996. 9. – reference: 9) 堀野,河野,佐原他,"フラックスレスはんだ接続プロセス技術",溶接学会全国大会講演概要集, 49 (1991) 396. – reference: 6) 河野,堀野,田口,"低温接合技術の開発",溶接技術, 5 (1989) 74. – reference: 7) 梶原,高橋,加藤他,"Au及びCu膜への表面活性化による常温超音波ボールボンディング"溶接学会全国大会講演概要集, 52 (1993) 196. – reference: 10) T. Nishikawa, M. Ijuin, R. Satoh et al. "Fluxless Soldering Process Technology," IEEE (1994) 286. |
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| Snippet | This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used... |
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| SubjectTerms | Ar atom bombardment defect rescue method thin LSI film |
| Title | Defect Rescue Method for Microprocessor, Using Bonding Technology with Ar Atom Bombardment |
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