Defect Rescue Method for Microprocessor, Using Bonding Technology with Ar Atom Bombardment

This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI...

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Published inQUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY Vol. 16; no. 2; pp. 264 - 271
Main Authors USAMI, Mitsuo, KOHNO, Akiomi, HORINO, Masaya, TASE, Takashi, TOKUDA, Masahide, SASAKI, Yasuhiko
Format Journal Article
LanguageJapanese
Published JAPAN WELDING SOCIETY 1998
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ISSN0288-4771
2434-8252
DOI10.2207/qjjws.16.264

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Abstract This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI film is bonded to a substrate. The irradiation does not cause electrical damage to the device. Although the clean surfaces are quickly re-contaminated after the irradiation, the LSI can be bonded at low temperature and under light pressure. The joints have a few voids at the interface, but the mechanical and their thermal properties are good enough for electronic devices. This new joining technology offers the possibility of developing a defect rescue method for active device transfer.
AbstractList This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI film is bonded to a substrate. The irradiation does not cause electrical damage to the device. Although the clean surfaces are quickly re-contaminated after the irradiation, the LSI can be bonded at low temperature and under light pressure. The joints have a few voids at the interface, but the mechanical and their thermal properties are good enough for electronic devices. This new joining technology offers the possibility of developing a defect rescue method for active device transfer.
Author TASE, Takashi
TOKUDA, Masahide
KOHNO, Akiomi
HORINO, Masaya
SASAKI, Yasuhiko
USAMI, Mitsuo
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  fullname: TASE, Takashi
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  fullname: TOKUDA, Masahide
  organization: Hitachi, Ltd., Central Research Laboratory
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  fullname: SASAKI, Yasuhiko
  organization: Hitachi, Ltd., Mechanical Engineering Research Laboratory
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References 7) 梶原,高橋,加藤他,"Au及びCu膜への表面活性化による常温超音波ボールボンディング"溶接学会全国大会講演概要集, 52 (1993) 196.
5) T. Suga, K. Miyazawa and Y. Yamagata, "Direct Bonding of Ceramics and Metals by Means of a Surface Activation Method in Ultrahigh Vacuum," Mat. Res. Soc. Int'l. Mtg. on Adv. Mats. 8 (1989) 252.
6) 河野,堀野,田口,"低温接合技術の開発",溶接技術, 5 (1989) 74.
10) T. Nishikawa, M. Ijuin, R. Satoh et al. "Fluxless Soldering Process Technology," IEEE (1994) 286.
8) J.M.E. Harper, H.L. Yeh and K.R. Grebe, "Ion beam joining Technique," J. Vac. Sci. Tech. 20, 3 (1982) 359.
9) 堀野,河野,佐原他,"フラックスレスはんだ接続プロセス技術",溶接学会全国大会講演概要集, 49 (1991) 396.
1) 宇佐美他5名:超高密度Si接合技術によるマイクロプロセッサの欠陥救済方法,電子情報通信学会秋季大会講演概要, 1996. 9.
2) J.ルーゲ,"固相接合機構について"溶接学会誌, 47, 7(1978) 402.
4) 加柴,町田,奥田,"超高真空常温界面接合装置の開発"溶接技術, 7 (1987) 88.
3) D.V. Keller, "Adhesion between Solid Metals", Wear 6 (1963) 353.
References_xml – reference: 2) J.ルーゲ,"固相接合機構について"溶接学会誌, 47, 7(1978) 402.
– reference: 8) J.M.E. Harper, H.L. Yeh and K.R. Grebe, "Ion beam joining Technique," J. Vac. Sci. Tech. 20, 3 (1982) 359.
– reference: 4) 加柴,町田,奥田,"超高真空常温界面接合装置の開発"溶接技術, 7 (1987) 88.
– reference: 5) T. Suga, K. Miyazawa and Y. Yamagata, "Direct Bonding of Ceramics and Metals by Means of a Surface Activation Method in Ultrahigh Vacuum," Mat. Res. Soc. Int'l. Mtg. on Adv. Mats. 8 (1989) 252.
– reference: 3) D.V. Keller, "Adhesion between Solid Metals", Wear 6 (1963) 353.
– reference: 1) 宇佐美他5名:超高密度Si接合技術によるマイクロプロセッサの欠陥救済方法,電子情報通信学会秋季大会講演概要, 1996. 9.
– reference: 9) 堀野,河野,佐原他,"フラックスレスはんだ接続プロセス技術",溶接学会全国大会講演概要集, 49 (1991) 396.
– reference: 6) 河野,堀野,田口,"低温接合技術の開発",溶接技術, 5 (1989) 74.
– reference: 7) 梶原,高橋,加藤他,"Au及びCu膜への表面活性化による常温超音波ボールボンディング"溶接学会全国大会講演概要集, 52 (1993) 196.
– reference: 10) T. Nishikawa, M. Ijuin, R. Satoh et al. "Fluxless Soldering Process Technology," IEEE (1994) 286.
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Snippet This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used...
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StartPage 264
SubjectTerms Ar atom bombardment
defect rescue method
thin LSI film
Title Defect Rescue Method for Microprocessor, Using Bonding Technology with Ar Atom Bombardment
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