Defect Rescue Method for Microprocessor, Using Bonding Technology with Ar Atom Bombardment

This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI...

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Bibliographic Details
Published inQUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY Vol. 16; no. 2; pp. 264 - 271
Main Authors USAMI, Mitsuo, KOHNO, Akiomi, HORINO, Masaya, TASE, Takashi, TOKUDA, Masahide, SASAKI, Yasuhiko
Format Journal Article
LanguageJapanese
Published JAPAN WELDING SOCIETY 1998
Subjects
Ar atom bombardment
defect rescue method
thin LSI film
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ISSN0288-4771
2434-8252
DOI10.2207/qjjws.16.264

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Summary:This paper describes an alternative Si circuit chip joining technique and discusses factors affecting bond quality. In this technique, an Ar atom beam is used to sputter-clean surfaces to be bonded. After contaminants on the surfaces to be bonded are removed by Ar atomic beam irradiation, a thin LSI film is bonded to a substrate. The irradiation does not cause electrical damage to the device. Although the clean surfaces are quickly re-contaminated after the irradiation, the LSI can be bonded at low temperature and under light pressure. The joints have a few voids at the interface, but the mechanical and their thermal properties are good enough for electronic devices. This new joining technology offers the possibility of developing a defect rescue method for active device transfer.
ISSN:0288-4771
2434-8252
DOI:10.2207/qjjws.16.264