Slurry components of TiO2 thin film in chemical mechanical polishing
A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on s...
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| Published in | 半导体学报：英文版 no. 10; pp. 190 - 194 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.10.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/35/10/106003 |
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| Abstract | A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on surface roughness and material removal rate were investigated. Our experimental results indicated that we got lower surface roughness （1.26 A, the scanned area was 10 × 10 μm2） and higher polishing rate （65.6 nm/min）, the optimal parameters were： silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively. |
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| AbstractList | A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on surface roughness and material removal rate were investigated. Our experimental results indicated that we got lower surface roughness （1.26 A, the scanned area was 10 × 10 μm2） and higher polishing rate （65.6 nm/min）, the optimal parameters were： silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively. |
| Author | 段波 周建伟 刘玉岭 王辰伟 张玉峰 |
| AuthorAffiliation | Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China |
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| Notes | A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on surface roughness and material removal rate were investigated. Our experimental results indicated that we got lower surface roughness （1.26 A, the scanned area was 10 × 10 μm2） and higher polishing rate （65.6 nm/min）, the optimal parameters were： silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively. 11-5781/TN TiO2 thin film; slurry components; surface roughness; removal rate Duan Bo, Zhou Jianwei, Liu Yuling, Wang Chenwei, Zhang Yufeng（ Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China） |
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| Snippet | A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process... |
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| SubjectTerms | 二氧化硅溶胶 化学机械抛光 去除速率 工艺条件 材料去除率 浆料成分 纳米TiO2薄膜 表面粗糙度 |
| Title | Slurry components of TiO2 thin film in chemical mechanical polishing |
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