Slurry components of TiO2 thin film in chemical mechanical polishing

A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on s...

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Published in半导体学报：英文版 no. 10; pp. 190 - 194
Main Author 段波 周建伟 刘玉岭 王辰伟 张玉峰
Format Journal Article
LanguageEnglish
Published 01.10.2014
Subjects
二氧化硅溶胶
化学机械抛光
去除速率
工艺条件
材料去除率
浆料成分
纳米TiO2薄膜
表面粗糙度
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ISSN1674-4926
DOI10.1088/1674-4926/35/10/106003

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Summary:A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on surface roughness and material removal rate were investigated. Our experimental results indicated that we got lower surface roughness （1.26 A, the scanned area was 10 × 10 μm2） and higher polishing rate （65.6 nm/min）, the optimal parameters were： silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively.
Bibliography:A chemical mechanical polishing （CMP） process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CME The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on surface roughness and material removal rate were investigated. Our experimental results indicated that we got lower surface roughness （1.26 A, the scanned area was 10 × 10 μm2） and higher polishing rate （65.6 nm/min）, the optimal parameters were： silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively.
11-5781/TN
TiO2 thin film; slurry components; surface roughness; removal rate
Duan Bo, Zhou Jianwei, Liu Yuling, Wang Chenwei, Zhang Yufeng（ Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China）
ISSN:1674-4926
DOI:10.1088/1674-4926/35/10/106003