Enhanced efficiency of the Sb2Se3 thin-film solar cell by physical and chemical passivation of the ITO/Sb2Se3 interface using an ultra-thin layer of AlOx

• Published in: Optical materials Vol. 152; p. 115537
• Main Authors: Chen, Zhi-Xiang, Xiang, Yi, Ma, Hao-Jie, Lei, Yun, Cheng, Chuan-Hui, Huang, Huolin, Han, Yong-Chang
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.2024
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2024.115537

Sb2Se3 is an emerging photovoltaic material. The non-radiative recombination loss at the surface and interface is one of the important reasons limiting the performance of Sb2Se3 solar cells. In this paper, an ultra-thin layer of AlOx was used to physically and chemically passivate the ITO/Sb2Se3 interface. The fixed negative charge in the AlOx layer created an electric field, which can block the diffusion of electrons from Sb2Se3 to the ITO anode, and thus suppress the recombination near the anode. Moreover, the AlOx layer inhibited the chemical reaction between ITO and Sb2Se3, and thereby reduced the interfacial state. The open-circuit voltage (Voc) was improved from 0.32 V to 0.37 V and the power conversion efficiency (PCE) was enhanced from 3.37 % to 4.33 % by introducing an ultra-thin layer of AlOx. The AlOx layer was prepared by the thermal oxidation of aluminum film deposited by the vacuum evaporation. Sb2Se3 solar cells were prepared by conventional vacuum evaporation. Our study provides a new method for interfacial passivation of Sb2Se3 solar cells. [Display omitted] •An ultra-thin layer of AlOx was used to passivate the ITO/Sb2Se3 interface in the Sb2Se3 solar cell.•The AlOx layer was prepared by the thermal oxidation of aluminum film deposited by the vacuum evaporation.•The power conversion efficiency was enhanced from 3.37 % to 4.33 % by introducing an ultra-thin layer of AlOx.