Contact resistance extraction methods for short- and long-channel carbon nanotube field-effect transistors

• Published in: Solid-state electronics Vol. 125; pp. 161 - 166
• Main Authors: Pacheco-Sanchez, Anibal, Claus, Martin, Mothes, Sven, Schröter, Michael
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2016
• Subjects: CNTFET; Contact resistance; Y-function method; Contact resistance; Y-function method; CNTFET
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2016.07.011

Three different methods for the extraction of the contact resistance based on both the well-known transfer length method (TLM) and two variants of the Y-function method have been applied to simulation and experimental data of short- and long-channel CNTFETs. While for TLM special CNT test structures are mandatory, standard electrical device characteristics are sufficient for the Y-function methods. The methods have been applied to CNTFETs with low and high channel resistance. It turned out that the standard Y-function method fails to deliver the correct contact resistance in case of a relatively high channel resistance compared to the contact resistances. A physics-based validation is also given for the application of these methods based on applying traditional Si MOSFET theory to quasi-ballistic CNTFETs.