APA (7th ed.) Citation

De Mey, G. (1983). A comment on "Modeling of MOS transistors with nonrectangular gate geometries". IEEE transactions on electron devices, 30(7), 862-863. https://doi.org/10.1109/T-ED.1983.21224

Chicago Style (17th ed.) Citation

De Mey, G. "A Comment on "Modeling of MOS Transistors with Nonrectangular Gate Geometries"." IEEE Transactions on Electron Devices 30, no. 7 (1983): 862-863. https://doi.org/10.1109/T-ED.1983.21224.

MLA (9th ed.) Citation

De Mey, G. "A Comment on "Modeling of MOS Transistors with Nonrectangular Gate Geometries"." IEEE Transactions on Electron Devices, vol. 30, no. 7, 1983, pp. 862-863, https://doi.org/10.1109/T-ED.1983.21224.