A comment on "Modeling of MOS transistors with nonrectangular gate geometries"

In the above mentioned paper, MOS transistors are investigated using the well-known Sah model. It was proved that for a given sheet conductivity law, conformal mapping techniques can be used to treat the nonlinear potential equation. It will be demonstrated that, by introducing an auxiliary potentia...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 30; no. 7; pp. 862 - 863
Main Author De Mey, G.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.07.1983
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Geometrical configuration
Transistor
Models
MOS transistor
Grid
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ISSN0018-9383
1557-9646
DOI10.1109/T-ED.1983.21224

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Summary:In the above mentioned paper, MOS transistors are investigated using the well-known Sah model. It was proved that for a given sheet conductivity law, conformal mapping techniques can be used to treat the nonlinear potential equation. It will be demonstrated that, by introducing an auxiliary potential function, the problem is reduced to the Laplace' equation, for which conformal mapping techniques are obvious. The method is also extended to arbitrary sheet conductivities.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1983.21224