Persistent photoconductivity of amorphous Hg0.78Cd0.22Te:In films

• Published in: 半导体学报：英文版 no. 10; pp. 42 - 46
• Main Author: 余连杰 苏玉辉 史衍丽 李雄军 赵维艳 马启 太云见 赵鹏
• Format: Journal Article
• Language: English
• Published: 01.10.2016
• Subjects: amorphous; effects; Hg0.78Cd0.22Te;persistent; photoconductivity;light-induced
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/37/10/103003

The persistent photoconductivity（PPC） of amorphous Hg0.78Cd0.22Te. In films has been studied under illumination by super-bandgap light（a He–Ne laser, hv=1.96 eV, 30 mW/cm2） and sub-bandgap light（1000 K Blackbody source, the largest photon energies h vp=0.42 eV, 8.9 mW/cm2） in the range of 80–300 K. The persistent photoconductivity effect increases with increase in illumination intensity and illumination time. However,it decreases with increase in working temperature. The non-exponential decay of photoconductivity implies the presence of continuous distribution of defect states in amorphous Hg0.78Cd0.22Te. In films. These results indicate that the decay of photoconductivity is not governed by the carrier trapped in the intrinsic defects, but it may be due to light-induced defects under light illumination.