Effect of Capacitor between Drain and Gate Terminals on Gate Magnetic Coupling Drive for Series-connected Power Semiconductor Devices

This study describes the experimental verification of series-connected power semiconductor devices and quantifies the voltage imbalance which occurs during the switching operation when the gate magnetic coupling and the addition of capacitor between drain and gate terminals methods are combined. Exp...

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Published inIEEJ JOURNAL OF INDUSTRY APPLICATIONS Vol. 145; no. 4
Main Authors Urakabe, Takahiro, Ishii, Kazuki, Hagiwara, Makoto, Higaki, Yusuke, Itogawa, Yuki, 隆浩, 浦壁, 一輝, 石井, 萩原 誠, 優介, 檜垣, 祐樹, 糸川
Format Journal Article
LanguageEnglish
Japanese
Published Tokyo Japan Science and Technology Agency 01.04.2025
Subjects
Capacitors
Coupling
Electric potential
Power semiconductor devices
Signal transmission
Silicon carbide
Voltage
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ISSN2187-1094
2187-1108
DOI10.1541/ieejias.145.287

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Summary:This study describes the experimental verification of series-connected power semiconductor devices and quantifies the voltage imbalance which occurs during the switching operation when the gate magnetic coupling and the addition of capacitor between drain and gate terminals methods are combined. Experiments using 3.3kV/750A SiC-MOSFET/SiC-SBD power modules showed the voltage imbalance evaluation originating from the difference in gate signal transmission and gate drive voltage for the conventional, magnetic coupling, capacitor addition methods and the two methods in combination. The combination of the two methods minimizes the voltage imbalance under these conditions. Moreover, the relationship between capacitance and switching losses is clarified.
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ISSN:2187-1094
2187-1108
DOI:10.1541/ieejias.145.287