Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition

A comparative study of two kinds of oxidants（H2O and O3） with the combinations of two metal precursors [trimethylaluminum（TMA） and tetrakis（ethylmethylamino） hafnium（TEMAH）] for atomic layer deposition（ALD） hafnium aluminum oxide（HfAlOx） films is carried out.The effects of different oxidants on the...

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Published inChinese physics B Vol. 22; no. 2; pp. 487 - 491
Main Author 樊继斌 刘红侠 马飞 卓青青 郝跃
Format Journal Article
LanguageEnglish
Published 01.02.2013
Subjects
三甲基铝
介电常数
原子层沉积
氧化剂
热退火效应
物理特性
电气特性
薄膜
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/22/2/027702

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Summary:A comparative study of two kinds of oxidants（H2O and O3） with the combinations of two metal precursors [trimethylaluminum（TMA） and tetrakis（ethylmethylamino） hafnium（TEMAH）] for atomic layer deposition（ALD） hafnium aluminum oxide（HfAlOx） films is carried out.The effects of different oxidants on the physical properties and electrical characteristics of HfAlOx films are studied.The preliminary testing results indicate that the impurity level of HfAlOx films grown with both H2O and O3 used as oxidants can be well controlled,which has significant effects on the dielectric constant,valence band,electrical properties,and stability of HfAlOx film.Additional thermal annealing effects on the properties of HfAlOx films grown with different oxidants are also investigated.
Bibliography:HfAlOx,atomic layer deposition,oxidants,annealing
A comparative study of two kinds of oxidants（H2O and O3） with the combinations of two metal precursors [trimethylaluminum（TMA） and tetrakis（ethylmethylamino） hafnium（TEMAH）] for atomic layer deposition（ALD） hafnium aluminum oxide（HfAlOx） films is carried out.The effects of different oxidants on the physical properties and electrical characteristics of HfAlOx films are studied.The preliminary testing results indicate that the impurity level of HfAlOx films grown with both H2O and O3 used as oxidants can be well controlled,which has significant effects on the dielectric constant,valence band,electrical properties,and stability of HfAlOx film.Additional thermal annealing effects on the properties of HfAlOx films grown with different oxidants are also investigated.
11-5639/O4
Fan Ji-Bin , Liu Hong-Xia , Ma Fei , Zhuo Qing-Qing , Hao Yue（ School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi＇an 710071, China）
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/22/2/027702