APA (7th ed.) Citation

Lind, A. G., Aldridge, H. L., Bomberger, C. C., Hatem, C., Zide, J. M. O., & Jones, K. S. (2015). Annealing Effects on the Electrical Activation of Si Dopants in InGaAs. ECS transactions, 66(7), 23-27. https://doi.org/10.1149/06607.0023ecst

Chicago Style (17th ed.) Citation

Lind, Aaron Gregg, Henry Lee Aldridge, Cory Carl Bomberger, Chris Hatem, Joshua M. O. Zide, and Kevin Scott Jones. "Annealing Effects on the Electrical Activation of Si Dopants in InGaAs." ECS Transactions 66, no. 7 (2015): 23-27. https://doi.org/10.1149/06607.0023ecst.

MLA (9th ed.) Citation

Lind, Aaron Gregg, et al. "Annealing Effects on the Electrical Activation of Si Dopants in InGaAs." ECS Transactions, vol. 66, no. 7, 2015, pp. 23-27, https://doi.org/10.1149/06607.0023ecst.