Annealing Effects on the Electrical Activation of Si Dopants in InGaAs

The thermal stability of Si dopants incorporated during growth and via ion implantation was investigated as a function of annealing time and temperature. Ion implanted samples show a maximum achievable doping concentration of 1.4×1019 cm-3. Growth doped samples exhibit higher post growth electrical...

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Bibliographic Details
Published inECS transactions Vol. 66; no. 7; pp. 23 - 27
Main Authors Lind, Aaron Gregg, Aldridge, Henry Lee, Bomberger, Cory Carl, Hatem, Chris, Zide, Joshua M. O., Jones, Kevin Scott
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 10.04.2015
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ISSN1938-5862
1938-6737
DOI10.1149/06607.0023ecst

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Summary:The thermal stability of Si dopants incorporated during growth and via ion implantation was investigated as a function of annealing time and temperature. Ion implanted samples show a maximum achievable doping concentration of 1.4×1019 cm-3. Growth doped samples exhibit higher post growth electrical activations than achievable in ion implanted samples but subsequent thermal processing at 750°C for 10 minutes is shown to deactivate heavily doped (3×1019 cm-3) MBE doped substrates to the same active doping concentration of 1.4×1019 cm-3 suggesting a common thermodynamic limit to Si activation in InGaAs.
ISSN:1938-5862
1938-6737
DOI:10.1149/06607.0023ecst