Study on electrical defects level in single layer two-dimensional Ta2O5

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta205 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta205 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2Os. Therefore,...

Full description

Saved in:
Bibliographic Details
Published in中国物理B：英文版 no. 4; pp. 339 - 343
Main Author 李大海 宋雄飞 胡林峰 王子仪 张荣君 陈良尧 张卫 周鹏
Format Journal Article
LanguageEnglish
Published 01.04.2016
Subjects
Ta2O5
二维
单层
场效应晶体管
椭偏光谱
电子能谱分析
电气性能
缺陷
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/25/4/047304

Cover

More Information
Summary:Two-dimensional atomic-layered material is a recent research focus, and single layer Ta205 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta205 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2Os. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2Os, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5.
Bibliography:single layer, electronic defects, spectroscopic ellipsometry
11-5639/O4
Two-dimensional atomic-layered material is a recent research focus, and single layer Ta205 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta205 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2Os. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2Os, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/4/047304