The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors
P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the o...
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| Published in | 中国物理B：英文版 Vol. 26; no. 11; pp. 1 - 14 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2017
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/26/11/117101 |
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| Abstract | P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method. |
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| AbstractList | P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method. |
| Author | 李炳生;肖芝燕;马剑刚;刘益春 |
| AuthorAffiliation | 1 Department of physics, School of Sciences, Harbin Institute of Technology, Harbin 150080, China;Key Laboratory of UV Light Emitting Materials and Technology Under Ministry of Education, Northeast Normal University, Changchun 130024, China |
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| DOI | 10.1088/1674-1056/26/11/117101 |
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| DocumentTitleAlternate | The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors |
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| Notes | Bing-Sheng Li1, Zhi-Yan Xiao2, Jian-Gang Ma2, Yi-Chun Liu2（ 1 Department of physics, School of Sciences, Harbin Institute of Technology, Harbin 150080, China; 2 Key Laboratory of UV Light Emitting Materials and Technology Under Ministry of Education, Northeast Normal University, Changchun 130024, China） P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method. 11-5639/O4 wide band gap semiconductor p-ZnO Zn3N2 thermal oxidation |
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| PublicationTitle | 中国物理B：英文版 |
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| Snippet | P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable... |
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| SubjectTerms | p型ZnO薄膜 光电器件 前驱体 反向 器件应用 掺杂方法 氧化方法 氮化锌 |
| Title | The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors |
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