The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors

P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the o...

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Published in中国物理B：英文版 Vol. 26; no. 11; pp. 1 - 14
Main Author 李炳生;肖芝燕;马剑刚;刘益春
Format Journal Article
LanguageEnglish
Published 01.11.2017
Subjects
p型ZnO薄膜
光电器件
前驱体
反向
器件应用
掺杂方法
氧化方法
氮化锌
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/11/117101

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Summary:P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.
Bibliography:Bing-Sheng Li1, Zhi-Yan Xiao2, Jian-Gang Ma2, Yi-Chun Liu2（ 1 Department of physics, School of Sciences, Harbin Institute of Technology, Harbin 150080, China; 2 Key Laboratory of UV Light Emitting Materials and Technology Under Ministry of Education, Northeast Normal University, Changchun 130024, China）
P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.
11-5639/O4
wide band gap semiconductor p-ZnO Zn3N2 thermal oxidation
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/11/117101