Structural and Magnetic Properties of Co2MnSi Thin Film with a Low Damping Constant

Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and subsequently annealed at 550℃ （sample I） exhibits a pseudo-epitaxial growth with part...

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Published in中国物理快报：英文版 no. 5; pp. 134 - 137
Main Author 乔士柱 张洁 秦羽丰 郝润润 钟海 朱大鹏 康韵 康仕寿 于淑云 韩广兵 颜世申 梅良模
Format Journal Article
LanguageEnglish
Published 01.05.2015
Subjects
单轴各向异性
吉尔伯特
磁性
结构
自旋轨道耦合
薄膜
退火温度
阻尼常数
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/5/057601

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Summary:Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and subsequently annealed at 550℃ （sample I） exhibits a pseudo-epitaxial growth with partially ordered L21 phase. Sample I shows a four-fold magnetic anisotropy, in addition to a relatively weak uniaxial anisotropy. The Gilbert damping factor of sample I is smaller than 0.001, much smaller than reported ones. The possible reasons responsible for the small Gilbert damping factor are discussed, including weak spin-orbit coupling, small density of states at Fermi level, and so on.
Bibliography:Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and subsequently annealed at 550℃ （sample I） exhibits a pseudo-epitaxial growth with partially ordered L21 phase. Sample I shows a four-fold magnetic anisotropy, in addition to a relatively weak uniaxial anisotropy. The Gilbert damping factor of sample I is smaller than 0.001, much smaller than reported ones. The possible reasons responsible for the small Gilbert damping factor are discussed, including weak spin-orbit coupling, small density of states at Fermi level, and so on.
11-1959/O4
QIAO Shi-Zhu,ZHANG Jie,QIN Yu-Feng, HAO Run-Run, ZHONG Hai, ZHU Da-Peng, KANG Yun（）~）~, KANG Shi-Shou,YU Shu-Yun, HAN Guang-Bing, YAN Shi-Shen,MEI Liang-Mo（1 School of Physics and State Key Lab of Crystal Materials, Shandong University, Jinan 250100 2Department of Applied Physics, School of Information Science and Engineering, Shandong Agricultural University, Tai＇an 271018
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/5/057601