Preparation of Ta-Doped TiO2 Using Ta2O5 as the Doping Source
A novel method for preparing Ta-doped Ti02 via using Ta2 05 as the doping source is proposed. The preparation process combines the hydrothernlal fluorination of Ta2O5 and the subsequent formation of Ta-doped TiO2 sol. The results show that the doped sample annealed at 393 K generates an unstable int...
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| Published in | 中国物理快报：英文版 no. 8; pp. 169 - 172 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2015
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/32/8/088102 |
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| Summary: | A novel method for preparing Ta-doped Ti02 via using Ta2 05 as the doping source is proposed. The preparation process combines the hydrothernlal fluorination of Ta2O5 and the subsequent formation of Ta-doped TiO2 sol. The results show that the doped sample annealed at 393 K generates an unstable intermediate NH4 TiOF3, which converts into anatase TiO2 with the increase of temperature. After annealing at ≥673K, the Ta-doped TiO2 nanocrystals with the grain size 〈20nm are obtained. Both the XRD and TG-DSC results confirm that Ta doping prevents the anatase-rutile crystal transition of TiO2. The band gap values of the doped samples, as obtained by UV-vis diffuse reflectance spectra, are smaller than that of pure anatase TiO2. The first-principle pseudopotential method calculations indicate that Ta5＋ lies in the TiO2 lattice at the interstitial position. |
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| Bibliography: | A novel method for preparing Ta-doped Ti02 via using Ta2 05 as the doping source is proposed. The preparation process combines the hydrothernlal fluorination of Ta2O5 and the subsequent formation of Ta-doped TiO2 sol. The results show that the doped sample annealed at 393 K generates an unstable intermediate NH4 TiOF3, which converts into anatase TiO2 with the increase of temperature. After annealing at ≥673K, the Ta-doped TiO2 nanocrystals with the grain size 〈20nm are obtained. Both the XRD and TG-DSC results confirm that Ta doping prevents the anatase-rutile crystal transition of TiO2. The band gap values of the doped samples, as obtained by UV-vis diffuse reflectance spectra, are smaller than that of pure anatase TiO2. The first-principle pseudopotential method calculations indicate that Ta5＋ lies in the TiO2 lattice at the interstitial position. 11-1959/O4 XU Cheng, LIN Di, NIU Ji-Nan, QIANG Ying-Huai, LI Da-Wei, TAO Chun-Xian（1 School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116 2Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 3 Shanghai Key Laboratory of Modern Optics System, School of Optics-Electrical and Computer Engineering University of Shanghai for Science and Technology, Shanghai 200093） |
| ISSN: | 0256-307X 1741-3540 |
| DOI: | 10.1088/0256-307X/32/8/088102 |