张玉明, 闫. 贾. 汤. 宋. (2014). Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics. 半导体学报：英文版, 6, 128-131. https://doi.org/10.1088/1674-4926/35/6/066001
Chicago Style (17th ed.) Citation张玉明, 闫宏丽 贾仁需 汤晓燕 宋庆文. "Effect of Re-oxidation Annealing Process on the SiO2/SiC Interface Characteristics." 半导体学报：英文版 6 (2014): 128-131. https://doi.org/10.1088/1674-4926/35/6/066001.
MLA (9th ed.) Citation张玉明, 闫宏丽 贾仁需 汤晓燕 宋庆文. "Effect of Re-oxidation Annealing Process on the SiO2/SiC Interface Characteristics." 半导体学报：英文版, 6, 2014, pp. 128-131, https://doi.org/10.1088/1674-4926/35/6/066001.
Warning: These citations may not always be 100% accurate.