Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics

The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage cu...

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Published in半导体学报：英文版 no. 6; pp. 128 - 131
Main Author 闫宏丽 贾仁需 汤晓燕 宋庆文 张玉明
Format Journal Article
LanguageEnglish
Published 01.06.2014
Subjects
X-射线光电子能谱
再氧化
工艺效果
接口特性
有效介电常数
电荷密度
界面陷阱密度
退火工艺
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ISSN1674-4926
DOI10.1088/1674-4926/35/6/066001

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Summary:The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 ℃ for 30 min, while a large num- ber of effective dielectric charges are generated. The components at the SiO2/SiC interface are analyzed by X-ray photoelectron spectroscopy （XPS） testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process.
Bibliography:SiO2/SiC; re-oxidation annealing; effective dielectric charge; interface trap
11-5781/TN
The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 ℃ for 30 min, while a large num- ber of effective dielectric charges are generated. The components at the SiO2/SiC interface are analyzed by X-ray photoelectron spectroscopy （XPS） testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process.
Yan Hongli, Jia Renxu, Tang Xiaoyan, Song Qingwen, Zhang Yuming School of Microelectronics, Xidian University, Xi＇an 710071, China
ISSN:1674-4926
DOI:10.1088/1674-4926/35/6/066001