UV-ozone-treated MoO3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC71BM photovoltaic devices

The enhanced performance of a squaraine compound, with 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine as the donor and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, in solution-processed or- ganic photovoltaic devices is obtained by using UV-ozone-treated MoO3...

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Published in中国物理B:英文版 no. 3; pp. 608 - 612
Main Author 杨倩倩 杨道宾 赵谡玲 黄艳 徐征 龚伟 樊星 刘志方 黄清雨 馀叙瑢
Format Journal Article
LanguageEnglish
Published 01.03.2014
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/23/3/038405

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Summary:The enhanced performance of a squaraine compound, with 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine as the donor and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, in solution-processed or- ganic photovoltaic devices is obtained by using UV-ozone-treated MoO3 as the hole-collecting buffer layer. The optimized thickness of the MoO3 layer is 8 nm, at which the device shows the best power conversion efficiency (PCE) among all devices, resulting from a balance of optical absorption and charge transport. After being treated by UV-ozone for 10 min, the transmittance of the MoO3 film is almost unchanged. Atomic force microscopy results show that the treated surface morphology is improved. A high PCE of 3.99% under AM 1.5 G illumination (100 mW/cm2) is obtained.
Bibliography:The enhanced performance of a squaraine compound, with 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine as the donor and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, in solution-processed or- ganic photovoltaic devices is obtained by using UV-ozone-treated MoO3 as the hole-collecting buffer layer. The optimized thickness of the MoO3 layer is 8 nm, at which the device shows the best power conversion efficiency (PCE) among all devices, resulting from a balance of optical absorption and charge transport. After being treated by UV-ozone for 10 min, the transmittance of the MoO3 film is almost unchanged. Atomic force microscopy results show that the treated surface morphology is improved. A high PCE of 3.99% under AM 1.5 G illumination (100 mW/cm2) is obtained.
11-5639/O4
organic photovoltaic devices, hole-collecting buffer layer, MOO3, UV-ozone
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/23/3/038405