Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown on semi-insulating GaAs substrates

In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer...

Full description

Saved in:
Bibliographic Details
Published in中国物理B：英文版 no. 7; pp. 463 - 466
Main Author 常虎东 孙兵 薛百清 刘桂明 赵威 王盛凯 刘洪刚
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
GaAs衬底
MOSFET器件
Si掺杂
半导体场效应晶体管
半绝缘
沟道迁移率
生长
阻挡层
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/22/7/077306

Cover

More Information
Summary:In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer, In0.4Ga0.6As MOSFETs with an In0.49Ga0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In0.4Ga0.6As MOSFETs （gate length 2 μm） with an In0.49Ga0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm2/（V·s）.
Bibliography:Chang Hu-Dong, Sun Bing, Xue Bai-Qing, Liu Gui-Ming, Zhao Wei, Wang Sheng-Kai,Liu Hong-Gang Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
metal–oxide–semiconductor field-effect transistor;InGaAs;InGaP;Al2O3
In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer, In0.4Ga0.6As MOSFETs with an In0.49Ga0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In0.4Ga0.6As MOSFETs （gate length 2 μm） with an In0.49Ga0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm2/（V·s）.
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/22/7/077306