Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

Chemical and field-effect passivation of atomic layer deposition （ALD） Al2O3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy （TEM） and X-ray photoelectron spectroscopy （XPS）, respecti...

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Published in中国物理B：英文版 no. 12; pp. 426 - 430
Main Author 张祥 刘邦武 赵彦 李超波 夏洋
Format Journal Article
LanguageEnglish
Published 01.12.2013
Subjects
Al2O3膜
X射线光电子能谱
化学钝化
原子层沉积
性能
氧化铝薄膜
退火温度
透射电子显微镜
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/22/12/127303

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Summary:Chemical and field-effect passivation of atomic layer deposition （ALD） Al2O3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy （TEM） and X-ray photoelectron spectroscopy （XPS）, respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 ℃ and 500 ℃, while the improvement is quite weak at 600 ℃, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al2O3/Si interface structural change. The Al–OH groups play an important role in chemical passivation, and the Al–OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree.
Bibliography:annealing atomic layer deposition Al2O3 passivation performance
Chemical and field-effect passivation of atomic layer deposition （ALD） Al2O3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy （TEM） and X-ray photoelectron spectroscopy （XPS）, respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 ℃ and 500 ℃, while the improvement is quite weak at 600 ℃, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al2O3/Si interface structural change. The Al–OH groups play an important role in chemical passivation, and the Al–OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree.
Zhang Xianga, Liu Bang-Wua, Zhao Yanb, Li Chao-Boa, Xia Yanga （a Key Laboratory of Microelectronics Devices ＆ Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;b Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China ）
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/22/12/127303