Effect of Variation of Gate Work-Function on Electrical Characteristics of Lightly Doped PMOSFET

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Bibliographic Details
Published inInternational Journal of Future Generation Communication and Networking
Format Journal Article
LanguageEnglish
Published 31.12.2019
Online AccessGet full text
ISSN2233-7857
2207-9645
DOI10.33832/ijfgcn.2019.12.4.02

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ISSN:2233-7857
2207-9645
DOI:10.33832/ijfgcn.2019.12.4.02