Effects of Si surficial structure on transport properties of La2/3Sr1/3MnO3 films
La2/3Sr1/3MnO3 films are deposited on（001） silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field ar...
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| Published in | 中国物理B：英文版 no. 10; pp. 287 - 292 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.10.2016
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| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/25/10/106701 |
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| Abstract | La2/3Sr1/3MnO3 films are deposited on（001） silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger（14.3% for acid-etched,and 42.9% for alkali-etched） than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design. |
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| AbstractList | La2/3Sr1/3MnO3 films are deposited on（001） silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger（14.3% for acid-etched,and 42.9% for alkali-etched） than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design. |
| Author | 顾晓敏 王伟 周国泰 高凯歌 蔡宏灵 张凤鸣 吴小山 |
| AuthorAffiliation | Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Photovoltaic Engineering Center,School of Physics, Nanjing University;Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures,School of Electronic Science and Engineering, Nanjing University |
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| Notes | Xiao-Min Gu;Wei Wang;Guo-Tai Zhou;Kai-Ge Gao;Hong-Ling Cai;Feng-Ming Zhang;Xiao-Shan Wu;Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures, Photovoltaic Engineering Center,School of Physics, Nanjing University;Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures,School of Electronic Science and Engineering, Nanjing University 11-5639/O4 |
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| Title | Effects of Si surficial structure on transport properties of La2/3Sr1/3MnO3 films |
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