Effects of Si surficial structure on transport properties of La2/3Sr1/3MnO3 films

• Published in: 中国物理B：英文版 no. 10; pp. 287 - 292
• Main Author: 顾晓敏 王伟 周国泰 高凯歌 蔡宏灵 张凤鸣 吴小山
• Format: Journal Article
• Language: English
• Published: 01.10.2016
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/25/10/106701

La2/3Sr1/3MnO3 films are deposited on（001） silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger（14.3% for acid-etched,and 42.9% for alkali-etched） than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.