极化效应对氮化镓型LED性能影响分析

对氮化镓（InGaN/GaN）型MQW（多量子阱）结构的蓝宝石衬底LED（发光二极管）受自发和压电极化效应的影响进行了研究。为了分析LED的输出特性,利用MATLAB软件对传统水平结构的InGaN/GaN型MQW蓝光LED芯片进行了模拟。研究表明,LED各个界面极化电荷同比例增加能稍微改善LED的电学特性,但却显著降低了LED的光输出功率和内量子效率,这主要是由于界面电荷改变了能带结构,阻碍了空穴的扩散与漂移,降低了辐射复合系数。可以通过改变位错密度来降低极化电荷对LED的影响,改善LED的性能。...

Full description

Saved in:
Bibliographic Details
Published inGuangtongxin Yanjiu pp. 46 - 48
Main Authors 张建亚, 黄勇林, 赵宇坤
Format Journal Article
LanguageChinese
Published 《光通信研究》编辑部 01.01.2013
Subjects
极化电荷;LED性能;能带结构;电子空穴浓度
Online AccessGet full text
ISSN1005-8788

Cover

Abstract 对氮化镓（InGaN/GaN）型MQW（多量子阱）结构的蓝宝石衬底LED（发光二极管）受自发和压电极化效应的影响进行了研究。为了分析LED的输出特性,利用MATLAB软件对传统水平结构的InGaN/GaN型MQW蓝光LED芯片进行了模拟。研究表明,LED各个界面极化电荷同比例增加能稍微改善LED的电学特性,但却显著降低了LED的光输出功率和内量子效率,这主要是由于界面电荷改变了能带结构,阻碍了空穴的扩散与漂移,降低了辐射复合系数。可以通过改变位错密度来降低极化电荷对LED的影响,改善LED的性能。
AbstractList 对氮化镓（InGaN/GaN）型MQW（多量子阱）结构的蓝宝石衬底LED（发光二极管）受自发和压电极化效应的影响进行了研究。为了分析LED的输出特性,利用MATLAB软件对传统水平结构的InGaN/GaN型MQW蓝光LED芯片进行了模拟。研究表明,LED各个界面极化电荷同比例增加能稍微改善LED的电学特性,但却显著降低了LED的光输出功率和内量子效率,这主要是由于界面电荷改变了能带结构,阻碍了空穴的扩散与漂移,降低了辐射复合系数。可以通过改变位错密度来降低极化电荷对LED的影响,改善LED的性能。
Author 张建亚
赵宇坤
黄勇林
Author_xml – sequence: 1
  fullname: 张建亚
– sequence: 2
  fullname: 黄勇林
– sequence: 3
  fullname: 赵宇坤
BookMark eNotjb1KA0EURqeIYIx5lIU7c2d3JqXEqIGAjdbL3fmRlZiVXRs7RZCACkJMym3t_CkV8jiz6Fu4qNXhO8V3tlhnVsxch3U5QBxppfUm61dVngFwDiKRssugqa_D_apZzsPnU3j9aN5e2vm9XIT6bjLaba6ev27WYf0eFg9hftvUj9tsw9O0cv1_9tjx3uhoeBBNDvfHw51JZLjAOJJIJBWCE1yQMAO0mhLniKPUCNxmpC2HDISURqCLDXogMtZnA-6tAuyx8d-vLeg0PS_zMyov04Ly9FcU5UlK5UVupi5ti9qjl-SUkKjaQMItgdE81rFVHn8An_lb6w
ContentType Journal Article
DBID DOA
DatabaseName DOAJ Directory of Open Access Journals
DatabaseTitleList
Database_xml – sequence: 1
  dbid: DOA
  name: DOAJ Directory of Open Access Journals
  url: https://www.doaj.org/
  sourceTypes: Open Website
DeliveryMethod fulltext_linktorsrc
EndPage 48
ExternalDocumentID oai_doaj_org_article_c128f3f4ae7243748361da0c81585d7f
GroupedDBID -0Y
ALMA_UNASSIGNED_HOLDINGS
CCEZO
CUBFJ
GROUPED_DOAJ
ID FETCH-LOGICAL-c1235-43aa4730e212a2c93d8a6eea1348301dba8d10b0244c23e5c3f0aacdfb91fd703
IEDL.DBID DOA
ISSN 1005-8788
IngestDate Fri Oct 03 12:41:18 EDT 2025
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Language Chinese
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c1235-43aa4730e212a2c93d8a6eea1348301dba8d10b0244c23e5c3f0aacdfb91fd703
OpenAccessLink https://doaj.org/article/c128f3f4ae7243748361da0c81585d7f
PageCount 3
ParticipantIDs doaj_primary_oai_doaj_org_article_c128f3f4ae7243748361da0c81585d7f
PublicationCentury 2000
PublicationDate 2013-01-01
PublicationDateYYYYMMDD 2013-01-01
PublicationDate_xml – month: 01
  year: 2013
  text: 2013-01-01
  day: 01
PublicationDecade 2010
PublicationTitle Guangtongxin Yanjiu
PublicationYear 2013
Publisher 《光通信研究》编辑部
Publisher_xml – name: 《光通信研究》编辑部
SSID ssib001102644
ssib036437403
ssib023646295
ssib000968521
ssib051369867
ssj0002912116
ssib044928848
Score 1.9247987
Snippet 对氮化镓（InGaN/GaN）型MQW（多量子阱）结构的蓝宝石衬底LED（发光二极管）受自发和压电极化效应的影响进行了研究。为了分析LED的输出特性,利用MATLAB软件对传统水平结构...
SourceID doaj
SourceType Open Website
StartPage 46
SubjectTerms 极化电荷;LED性能;能带结构;电子空穴浓度
Title 极化效应对氮化镓型LED性能影响分析
URI https://doaj.org/article/c128f3f4ae7243748361da0c81585d7f
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV07S8RAEF7EykYUFd9cYRvMZjfZ3dLHHYeolQfXhc0-sDpFzsZKEeRABeE8y2vtfJQK93MS9F84m0QunY3lBrIwM9n5vkky3yC0YUKKE0BGD2vuWnKE9IQOlMe4ESZiQBLykSwHh1GzRffaYbsy6sv9E1bIAxeO21SQQC2xVBrmtPMoJxHW0lccA9HVzLrs63NRKaZKYs6rwAQg55D_d-1U06Ng3JFK3OerijAdpSLgfFwohJhEgpdA7XJ8IJw0Wt665KQ8OXOTWyqi_zk6NWbQdEkra1uFObNo4uJ4DvnZ8Cq9e8oGvfTzMX39yN5eYPk96KfD2_36bnb5_HU9Skfvaf8-7d1kw4d51GrUj3aaXjkhwVOuxxV8KyWFM2oAgGSgBNFcRsZITMBPPtaJ5Br7YC-lKiAmVMT6UiptE4GthsO-gCY7Jx2ziGqcmkixREO9CMBm4FYK3MDCRsxiRtQS2nbmxaeFCEbsZKnzCxCsuAxW_Fewlv9jkxU0FeQzKdx7kFU02T07N2vADLrJev4Q_ACXhbmx
linkProvider Directory of Open Access Journals
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=%E6%9E%81%E5%8C%96%E6%95%88%E5%BA%94%E5%AF%B9%E6%B0%AE%E5%8C%96%E9%95%93%E5%9E%8BLED%E6%80%A7%E8%83%BD%E5%BD%B1%E5%93%8D%E5%88%86%E6%9E%90&rft.jtitle=Guangtongxin+Yanjiu&rft.au=%E5%BC%A0%E5%BB%BA%E4%BA%9A&rft.au=%E9%BB%84%E5%8B%87%E6%9E%97&rft.au=%E8%B5%B5%E5%AE%87%E5%9D%A4&rft.date=2013-01-01&rft.pub=%E3%80%8A%E5%85%89%E9%80%9A%E4%BF%A1%E7%A0%94%E7%A9%B6%E3%80%8B%E7%BC%96%E8%BE%91%E9%83%A8&rft.issn=1005-8788&rft.spage=46&rft.epage=48&rft.externalDBID=DOA&rft.externalDocID=oai_doaj_org_article_c128f3f4ae7243748361da0c81585d7f
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1005-8788&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1005-8788&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1005-8788&client=summon