Simulation of electric properties of MFIS capacitor with BNT ferroelectric thin film using Silvaco/Atlas

• Published in: Transactions of Nonferrous Metals Society of China Vol. 17; no. A02; pp. 752 - 755
• Main Author: 郑学军 张俊杰 周益舂 唐明华 杨博 陈义强
• Format: Journal Article
• Language: English
• Published: 01.11.2007
• Subjects: MFIS电容器; 介电性能; 铁电薄膜
• ISSN: 1003-6326

Metal-ferroelectric-insulator-silicon （MFIS） capacitors with Bi3.15Nd0.85Ti3O12 （BNT） ferroelectric thin film were simulated using a commercial software Silvaco/Atlas, and the effects of applied voltage and insulator layer on capacitance-voltage （C-V） hysteresis loops and memory windows were investigated. For the MFIS capacitors with CeO2 insulator, with the increase of applied voltage from 2 V to 15 V, the C-V loops become wider and memory windows increase from 0.15 V to 1.27 V. When the thickness of CeO2 layer increases from 1 nm to 5 nm at the applied voltage of 5 V, the C-V loops become narrower and the memory windows decrease from 1.09 V to 0.36 V. For MFIS capacitors with different insulator layers （CeO2, HfO2, Y2O3, Si3N4 and SiO2）, the high dielectric constants can make the C-V loops wider and improve the capacitor＇s memory window. The simulation results prove that Silvaco/Atlas is a powerful simulator for MFIS capacitor, and they are helpful to the fabrication of MFIS nonvolatile memory devices.