Preparing Cu2ZnSnS4 films using the co-electrodeposition method with ionic liquids

Cu2ZnSnS4（CZTS） films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 C for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/（Zn＋Sn）=0.71 has a kesterite structure,a bandga...

Full description

Saved in:
Bibliographic Details
Published in中国物理B：英文版 Vol. 21; no. 5; pp. 697 - 700
Main Author 陈永生 王英君 李瑞 谷锦华 卢景霄 杨仕娥
Format Journal Article
LanguageEnglish
Published 01.05.2012
Subjects
保护气体
器件应用
水溶液
沉积
电影
离子液体
离子溶液
薄膜合成
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/21/5/058801

Cover

More Information
Summary:Cu2ZnSnS4（CZTS） films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 C for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/（Zn＋Sn）=0.71 has a kesterite structure,a bandgap of about 1.51 eV,and an absorption coefficient of the order of 10 4 cm 1.This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.
Bibliography:Cu2ZnSnS4（CZTS） films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 C for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/（Zn＋Sn）=0.71 has a kesterite structure,a bandgap of about 1.51 eV,and an absorption coefficient of the order of 10 4 cm 1.This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.
sulfurization; Cu2ZnSnS4; co-electrodeposition
Chen Yong-Sheng,Wang Ying-Jun,Li Rui,Gu Jin-Hua,Lu Jing-Xiao,and Yang Shi-E Key Laboratory of Material Physics,Department of Physics,Zhengzhou University,Zhengzhou 450052,China
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/21/5/058801