APA (7th ed.) Citation

Yu, C., & Yuan, J. S. (2007). CMOS Device and Circuit Degradations Subject to \hbox Gate Breakdown and Transient Charge-Trapping Effect. IEEE transactions on electron devices, 54(1), 59-67. https://doi.org/10.1109/TED.2006.887517

Chicago Style (17th ed.) Citation

Yu, Chuanzhao, and J. S. Yuan. "CMOS Device and Circuit Degradations Subject to \hbox Gate Breakdown and Transient Charge-Trapping Effect." IEEE Transactions on Electron Devices 54, no. 1 (2007): 59-67. https://doi.org/10.1109/TED.2006.887517.

MLA (9th ed.) Citation

Yu, Chuanzhao, and J. S. Yuan. "CMOS Device and Circuit Degradations Subject to \hbox Gate Breakdown and Transient Charge-Trapping Effect." IEEE Transactions on Electron Devices, vol. 54, no. 1, 2007, pp. 59-67, https://doi.org/10.1109/TED.2006.887517.