CMOS Device and Circuit Degradations Subject to \hbox Gate Breakdown and Transient Charge-Trapping Effect

The gate leakage current of HfO 2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 54; no. 1; pp. 59 - 67
Main Authors Yu, Chuanzhao, Yuan, J. S.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.2007
Subjects
CMOS oscillators
dielectric breakdown (BD)
fast transient charge effect
Hafnium compounds
High-k dielectric materials
leakage current
Leakage currents
Logic gates
low-noise amplifier (LNA)
Noise measurement
reliability
Stress
Transistors
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ISSN0018-9383
DOI10.1109/TED.2006.887517

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Summary:The gate leakage current of HfO 2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier
ISSN:0018-9383
DOI:10.1109/TED.2006.887517