Photoinduced Kondo effect in CeZn\(_{3}\)P\(_{3}\)

The Kondo effect, which originates from the screening of a localized magnetic moment by a spin-spin interaction, is widely observed in non-artificial magnetic materials, artificial quantum dots, and carbon nanotubes. In devices based on quantum dots or carbon nanotubes that target quantum informatio...

Full description

Saved in:
Bibliographic Details
Published inarXiv.org
Main Authors Kitagawa, Jiro, Kitajima, Daiki, Shimokawa, Kenji, Takaki, Hiroto
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 06.01.2016
Subjects
Online AccessGet full text
ISSN2331-8422
DOI10.48550/arxiv.1509.04909

Cover

More Information
Summary:The Kondo effect, which originates from the screening of a localized magnetic moment by a spin-spin interaction, is widely observed in non-artificial magnetic materials, artificial quantum dots, and carbon nanotubes. In devices based on quantum dots or carbon nanotubes that target quantum information applications, the Kondo effect can be tuned by a gate voltage, a magnetic field, or light. However, the manipulation of the Kondo effect in non-artificial materials has not been thoroughly studied; in particular, the artificial creation of the Kondo effect remains unexplored. Per this subject study, however, a new route for the optical creation of the Kondo effect in the non-artificial material \(p\)-type semiconductor CeZn\(_{3}\)P\(_{3}\) is presented. The Kondo effect emerges under visible-light illumination of the material by a continuous-wave laser diode and is ultimately revealed by photoinduced electrical resistivity, which clearly exhibits a logarithmic temperature dependency. By contrast, a La-based compound (LaZn\(_{3}\)P\(_{3}\)) displays only normal metallic behavior under similar illumination. The photoinduced Kondo effect, which occurs at higher temperatures when compared with the Kondo effect in artificial systems, provides a potential new range of operation for not only quantum information/computation devices but also for operation of magneto-optic devices thereby expanding the range of device applications based on the Kondo effect.
Bibliography:SourceType-Working Papers-1
ObjectType-Working Paper/Pre-Print-1
content type line 50
ISSN:2331-8422
DOI:10.48550/arxiv.1509.04909