Photoinduced Kondo effect in CeZn\(_{3}\)P\(_{3}\)
The Kondo effect, which originates from the screening of a localized magnetic moment by a spin-spin interaction, is widely observed in non-artificial magnetic materials, artificial quantum dots, and carbon nanotubes. In devices based on quantum dots or carbon nanotubes that target quantum informatio...
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Published in | arXiv.org |
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Main Authors | , , , |
Format | Paper Journal Article |
Language | English |
Published |
Ithaca
Cornell University Library, arXiv.org
06.01.2016
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Subjects | |
Online Access | Get full text |
ISSN | 2331-8422 |
DOI | 10.48550/arxiv.1509.04909 |
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Summary: | The Kondo effect, which originates from the screening of a localized magnetic moment by a spin-spin interaction, is widely observed in non-artificial magnetic materials, artificial quantum dots, and carbon nanotubes. In devices based on quantum dots or carbon nanotubes that target quantum information applications, the Kondo effect can be tuned by a gate voltage, a magnetic field, or light. However, the manipulation of the Kondo effect in non-artificial materials has not been thoroughly studied; in particular, the artificial creation of the Kondo effect remains unexplored. Per this subject study, however, a new route for the optical creation of the Kondo effect in the non-artificial material \(p\)-type semiconductor CeZn\(_{3}\)P\(_{3}\) is presented. The Kondo effect emerges under visible-light illumination of the material by a continuous-wave laser diode and is ultimately revealed by photoinduced electrical resistivity, which clearly exhibits a logarithmic temperature dependency. By contrast, a La-based compound (LaZn\(_{3}\)P\(_{3}\)) displays only normal metallic behavior under similar illumination. The photoinduced Kondo effect, which occurs at higher temperatures when compared with the Kondo effect in artificial systems, provides a potential new range of operation for not only quantum information/computation devices but also for operation of magneto-optic devices thereby expanding the range of device applications based on the Kondo effect. |
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Bibliography: | SourceType-Working Papers-1 ObjectType-Working Paper/Pre-Print-1 content type line 50 |
ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.1509.04909 |