Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

• Published in: Nano letters Vol. 11; no. 5; pp. 2028 - 2031
• Main Authors: Heurlin, Magnus, Wickert, Peter, Fält, Stefan, Borgström, Magnus T, Deppert, Knut, Samuelson, Lars, Magnusson, Martin H
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 11.05.2011
• Subjects: Condensed Matter Physics (including Material Physics, Nano Physics); Cross-disciplinary physics: materials science; rheology; Den kondenserade materiens fysik (Här ingår: Materialfysik, nanofysik); Engineering and Technology; Exact sciences and technology; Fysik; Materials science; Methods of nanofabrication; Nano-technology; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanoteknik; Natural Sciences; Naturvetenskap; Physical Sciences; Physics; Quantum wires; Teknik; doping; Nanowires; MOVPE; III−V; photovoltaics; MOVPE method; Growth mechanism; Illumination; Etching; Nanostructured materials; III-V compound; Indium phosphide; Nanomaterial synthesis; III-V semiconductors
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/nl2004219

Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal−organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.