Charge Transport in Highly Face-On Poly(3-hexylthiophene) Films
We report that the π-stacking direction in poly(3-hexylthiophene) (P3HT) films can be made to orient strongly out-of plane by uniaxially straining films in orthogonal directions, providing a valuable opportunity to evaluate charge transport in a very unusual microstructure for this material. The str...
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Published in | Journal of physical chemistry. C Vol. 117; no. 34; pp. 17421 - 17428 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Columbus, OH
American Chemical Society
29.08.2013
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Subjects | |
Online Access | Get full text |
ISSN | 1932-7447 1932-7455 |
DOI | 10.1021/jp4050644 |
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Summary: | We report that the π-stacking direction in poly(3-hexylthiophene) (P3HT) films can be made to orient strongly out-of plane by uniaxially straining films in orthogonal directions, providing a valuable opportunity to evaluate charge transport in a very unusual microstructure for this material. The structure of the films was characterized using UV–visible spectroscopy, X-ray diffraction, and near-edge X-ray absorption fine structure spectroscopy, showing that unstrained films have a weakly edge-on stacking character with a large orientation distribution, whereas films strained biaxially by 100% in orthogonal directions have highly face-on stacking. In the biaxially strained films the face-on packing occurs while the P3HT long axis orientation is found to be only weakly anisotropic in-plane. Charge transport is characterized in an organic thin-film transistor (OTFT) configuration, showing that the saturated field effect mobility in the biaxially strained films is greater than that for unstrained films for channel lengths ≤10 μm. The mobilities are found to have different channel-length dependence, attributed primarily to differences in the field-dependent charge-transport behavior, resulting in the mobility being comparable for channel lengths of 20 μm. The results suggest that edge-on packing is not a prerequisite for relatively high-field-effect mobility in P3HT-based OTFTs. |
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Bibliography: | DE-AC02-98CH10886 BNL-103145-2013-JA USDOE SC OFFICE OF SCIENCE (SC) |
ISSN: | 1932-7447 1932-7455 |
DOI: | 10.1021/jp4050644 |