High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics

• Published in: Nano letters Vol. 10; no. 9; pp. 3464 - 3466
• Main Authors: Kim, Beom Joon, Jang, Houk, Lee, Seoung-Ki, Hong, Byung Hee, Ahn, Jong-Hyun, Cho, Jeong Ho
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 08.09.2010
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Materials science; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Specific materials; Transistors; ion gel; flexible electronics; field effect transistor; Graphene; low-voltage operation; Field effect transistors; Gallium tellurides; Hole mobility; Electron mobility; Capacitance; Low field; Arrays; IV characteristic; Flexibility; Gates
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/nl101559n

A high-performance low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 ± 57 and 91 ± 50 cm2/(V·s), respectively, at a drain bias of −1 V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.