Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SiC...

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Bibliographic Details
Published inNano letters Vol. 3; no. 12; pp. 1751 - 1755
Main Authors Yang, Xiaojing, Guillorn, Michael A, Austin, Derek, Melechko, Anatoli V, Cui, Hongtao, Meyer, Harry M, Merkulov, Vladimir I, Caughman, J. B. O, Lowndes, Douglas H, Simpson, Michael L
Format Journal Article
LanguageEnglish
Published Washington, DC American Chemical Society 01.12.2003
Subjects
Applied sciences
Diodes
Electronics
Exact sciences and technology
Junction diodes
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Scanning electron microscopy
Binary compound
Voltage current curve
Nanofiber
Experimental study
Inorganic compound
Silicon carbide
Growth mechanism
Chemical composition
Barrier height
Schottky barrier diode
Nanostructured materials
Auger electron spectrometry
Nanotechnology
Carbon fiber
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ISSN1530-6984
1530-6992
DOI10.1021/nl0346631

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Summary:We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SiC is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl0346631