Adaptive techniques for overcoming performance degradation due to aging in digital circuits
Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a major reliability concern in present-day digital circuit design. Further, with the recent usage of Hf-based high-k dielectrics for gate leakage reduction, Positive Bias Temperature Instability (PBTI), the dual effect in NM...
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| Published in | Proceedings of the 2009 Asia and South Pacific Design Automation Conference pp. 284 - 289 |
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| Main Authors | , , |
| Format | Conference Proceeding |
| Language | English |
| Published |
Piscataway, NJ, USA
IEEE Press
19.01.2009
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| Series | ACM Conferences |
| Online Access | Get full text |
| ISBN | 9781424427482 1424427487 |
| DOI | 10.5555/1509633.1509709 |
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| Summary: | Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a major reliability concern in present-day digital circuit design. Further, with the recent usage of Hf-based high-k dielectrics for gate leakage reduction, Positive Bias Temperature Instability (PBTI), the dual effect in NMOS transistors has also reached significant levels. Consequently, designers are required to build in substantial guard-bands into their designs, leading to large area and power overheads, in order to guarantee reliable operation over the lifetime of a chip. We propose a guard-banding technique based on adaptive body bias (ABB) and adaptive supply voltage (ASV), to recover the performance of an aged circuit, and compare its merits over previous approaches. |
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| ISBN: | 9781424427482 1424427487 |
| DOI: | 10.5555/1509633.1509709 |