Adaptive techniques for overcoming performance degradation due to aging in digital circuits

Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a major reliability concern in present-day digital circuit design. Further, with the recent usage of Hf-based high-k dielectrics for gate leakage reduction, Positive Bias Temperature Instability (PBTI), the dual effect in NM...

Full description

Saved in:
Bibliographic Details
Published inProceedings of the 2009 Asia and South Pacific Design Automation Conference pp. 284 - 289
Main Authors Kumar, Sanjay V., Kim, Chris H., Sapatnekar, Sachin S.
Format Conference Proceeding
LanguageEnglish
Published Piscataway, NJ, USA IEEE Press 19.01.2009
SeriesACM Conferences
Online AccessGet full text
ISBN9781424427482
1424427487
DOI10.5555/1509633.1509709

Cover

More Information
Summary:Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a major reliability concern in present-day digital circuit design. Further, with the recent usage of Hf-based high-k dielectrics for gate leakage reduction, Positive Bias Temperature Instability (PBTI), the dual effect in NMOS transistors has also reached significant levels. Consequently, designers are required to build in substantial guard-bands into their designs, leading to large area and power overheads, in order to guarantee reliable operation over the lifetime of a chip. We propose a guard-banding technique based on adaptive body bias (ABB) and adaptive supply voltage (ASV), to recover the performance of an aged circuit, and compare its merits over previous approaches.
ISBN:9781424427482
1424427487
DOI:10.5555/1509633.1509709