Handbook of silicon based mems materials and technologies

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Bibliographic Details
Other Authors: Tilli, Markku, (Editor)
Format: eBook
Language: English
Published: Amsterdam : Elsevier, 2020.
Edition: Third edition.
Series: Micro & nano technologies.
Subjects:
Microelectromechanical systems.
Silicon.
elektronické knihy
electronic books
ISBN: 9780128177877
012817787X
9780128177860
0128177861
Physical Description: 1 online resource

Cover

Table of contents

LEADER 04694cam a2200457 i 4500
001 kn-on1152528047
003 OCoLC
005 20240717213016.0
006 m o d
007 cr cn|||||||||
008 200429s2020 ne o 001 0 eng d
040 |a OPELS  |b eng  |e rda  |e pn  |c OPELS  |d EBLCP  |d OCLCF  |d UKAHL  |d UKMGB  |d OCLCQ  |d OCLCO  |d COM  |d OCLCQ  |d OCLCO  |d OCLCL  |d SXB  |d OCLCQ  |d OCLCO 
020 |a 9780128177877  |q (ePub ebook) 
020 |a 012817787X 
020 |z 9780128177860 
020 |z 0128177861 
035 |a (OCoLC)1152528047 
245 0 0 |a Handbook of silicon based mems materials and technologies /  |c edited by Markku Tilli [and five others]. 
250 |a Third edition. 
264 1 |a Amsterdam :  |b Elsevier,  |c 2020. 
300 |a 1 online resource 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Micro and nano technologies series 
500 |a Includes index. 
505 0 |a Front Cover -- Handbook of Silicon Based MEMS Materials and Technologies -- Copyright Page -- Contents -- List of contributors -- Preface -- Where is silicon based MEMS heading to? -- References -- I. Silicon as MEMS Material -- 1 Properties of silicon -- 1.1 Properties of silicon -- 1.1.1 Crystallography of silicon -- 1.1.1.1 Miller index (hkl) system -- 1.1.1.2 Stereographic projection -- 1.1.2 Defects in silicon lattice -- 1.1.3 Mechanical properties of silicon -- 1.1.4 Electrical properties -- 1.1.4.1 Introduction-dopants and impurities in silicon 
505 8 |a 1.1.4.2 Piezoresistive effect in silicon -- General piezoresistive effect -- Strain -- Stress in anisotropic materials -- Strain effect on resistivity -- Linearity -- Effect of temperature and doping -- Example of a piezoresistive sensor design -- Surface effects -- References -- 2 Czochralski growth of silicon crystals -- 2.1 The Czochralski crystal-growing furnace -- 2.1.1 Crucible -- 2.1.2 Hot zone materials -- 2.1.3 Hot zone structure -- 2.1.4 Gas flow -- 2.2 Stages of growth process -- 2.2.1 Melting -- 2.2.2 Neck -- 2.2.3 Crown -- 2.2.4 Body -- 2.2.5 Tail -- 2.2.6 Shut-off 
505 8 |a 2.3 Selected issues of crystal growth -- 2.3.1 Diameter control -- 2.3.2 Doping -- 2.3.3 Hot zone lifetime -- 2.4 Improved thermal and gas-flow designs -- 2.5 Heat transfer -- 2.6 Melt convection -- 2.6.1 Free convection -- 2.6.2 Crucible rotation -- 2.6.3 Crystal rotation -- 2.6.4 Marangoni convection and gas shear -- 2.7 Magnetic fields -- 2.7.1 Cusp field -- 2.7.2 Transverse field -- 2.7.3 Melt flows under transverse field -- 2.7.4 Time-dependent fields -- 2.8 Hot recharging and continuous feed -- 2.8.1 Hot recharging -- 2.8.2 Charge topping -- 2.8.3 Crucible modifications 
505 8 |a 2.8.4 Continuous Czochralski growth -- 2.9 Heavily n-type doped silicon and constitutional supercooling -- 2.9.1 Constitutional supercooling -- 2.9.2 Melting-point depression -- 2.9.3 Origin of dopant gradient in the melt -- 2.9.4 Path to lower resistivity -- 2.10 Growth of large diameter crystals -- 2.10.1 Neck growth for large crystals -- 2.10.2 Neck extension -- 2.10.3 Additional stresses on neck -- 2.10.4 Dislocations oriented in (100) direction in large diameter crystals -- 2.10.5 Crucible wall temperature -- 2.10.6 Double-layered crucible structure -- 2.10.7 Crucible deformations 
505 8 |a 2.10.8 Intentional devitrification -- 2.10.9 Transverse or cusp field for very large crystals -- 2.10.10 Boosting crystal weight -- 2.10.11 Seed chuck -- 2.10.12 Additional challenges -- References -- Further reading -- 3 Properties of silicon crystals -- 3.1 Dopants and impurities -- 3.2 Typical impurity concentrations -- 3.3 Concentration of dopants and impurities in axial direction -- 3.4 Resistivity -- 3.5 Radial variation of impurities and resistivity -- 3.6 Thermal donors -- 3.7 Defects in silicon crystals 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Microelectromechanical systems. 
650 0 |a Silicon. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Tilli, Markku,  |e editor.  |1 https://id.oclc.org/worldcat/entity/E39PCjtVhTRMMPbdgKCmMMmVyd 
776 0 8 |i Print version:  |t Handbook of silicon based mems materials and technologies.  |b Third edition.  |d Amsterdam : Elsevier, 2020  |z 9780128177860  |w (OCoLC)1151986311 
830 0 |a Micro & nano technologies. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpHSBMEM12/handbook-of-silicon?kpromoter=marc  |y Full text 

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