Gallium nitride power devices
"GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be d...
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Other Authors: | , |
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Format: | eBook |
Language: | English |
Published: |
Singapore :
Pan Stanford Publishing,
2017.
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Subjects: | |
ISBN: | 9781315196626 131519662X 9781351767613 1351767615 9781523114351 1523114355 9781351767606 1351767607 9789814774093 981477409X 9781351767590 1351767593 |
Physical Description: | 1 online resource (x, 298 pages) : illustrations |
Summary: | "GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China."--Provided by publisher. |
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Bibliography: | Includes bibliographical references and index. |
ISBN: | 9781315196626 131519662X 9781351767613 1351767615 9781523114351 1523114355 9781351767606 1351767607 9789814774093 981477409X 9781351767590 1351767593 |
Access: | Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty |