Handbook of silicon based MEMS materials and technologies

• Other Authors: Tilli, Markku (Editor)
• Format: Electronic eBook
• Language: English
• Published: London, UK : William Andrew is an imprint of Elsevier, 2015.
• Edition: Second edition.
• Series: Micro & nano technologies.
• Subjects: Microelectromechanical systems.; Microelectromechanical systems > Materials.; Silicon > Electric properties.; elektronické knihy; electronic books
• ISBN: 9780323312233; 0323312233; 0323299652; 9780323299657
• Physical Description: 1 online resource : illustrations

The Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains...

Table of Contents:

• Front Cover
• Handbook of Silicon Based MEMS Materials and Technologies
• Copyright Page
• Contents
• List of Contributors
• Preface to the Second Edition
• Overview: Impact of Silicon MEMS-40Years After
• 1 Introduction
• 2 Towards Mass Volumes of Mems Devices
• 2.1 Early Visions
• 2.2 Inkjet Printer Nozzles Create the Industry
• 2.3 Automotive Applications Drive the Reliability and the Quality
• 2.4 Leaps Towards a Generic Manufacturing Platform
• 3 Towards Every Pocket
• 3.1 New Trends
• 3.2 Consumer Products
• 3.2.1 From Wristwatch to Wearable Electronics
• 3.2.2 Cameras, Displays and Projectors
• 3.2.3 Gaming and Virtual Reality
• 3.3 Medical Applications of MEMS Devices
• 4 Mobile Phones, Smart Phones, and Tablets
• 4.1 RF MEMS
• 4.2 Sensors and Actuators
• 4.3 Silicon Microphone
• 4.4 Modular Sensor Architectures
• 5 Ubiquitous Sensing, Computing and Communication
• 5.1 Merged Physical and Digital Worlds
• 5.2 Wireless Sensing and Sensor Networks
• 5.3 Mobile Device as a Sensor
• 6 Future of Mems Technologies
• 6.1 Is Silicon Enough?
• 6.2 Platform for Nanoscience and Nanotechnologies
• 7 Conclusions
• Acknowledgments
• References
• I. Silicon as MEMS Material
• 1 Properties of Silicon
• 1.1 Properties of Silicon
• 1.1.1 Crystallography of Silicon
• 1.1.1.1 Miller Index (hkl) System
• 1.1.1.2 Stereographic Projection
• 1.1.2 Defects in Silicon Lattice
• 1.1.3 Mechanical Properties of Silicon
• 1.1.4 Electrical Properties
• 1.1.4.1 Introduction-Dopants and Impurities in Silicon
• 1.1.4.2 Piezoresistive Effect in Silicon
• 1.1.4.2.1 General Piezoresistive Effect
• 1.1.4.2.2 Strain
• 1.1.4.2.3 Stress in Anisotropic Materials
• 1.1.4.2.4 Strain Effect on Resistivity
• 1.1.4.2.5 Linearity
• 1.1.4.2.6 Effect of Temperature and Doping
• 1.1.4.2.7 Example of a Piezoresistive Sensor Design.
• 1.1.4.2.8 Surface Effects
• References
• 2 Czochralski Growth of Silicon Crystals
• 2.1 The CZ Crystal-Growing Furnace
• 2.1.1 Crucible
• 2.1.2 HZ Materials
• 2.1.3 HZ Structure
• 2.1.4 Gas Flow
• 2.2 Stages of Growth Process
• 2.2.1 Melting
• 2.2.2 Neck
• 2.2.3 Crown
• 2.2.4 Body
• 2.2.5 Tail
• 2.2.6 Shut-Off
• 2.3 Selected Issues of Crystal Growth
• 2.3.1 Diameter Control
• 2.3.2 Doping
• 2.3.3 HZ Lifetime
• 2.4 Improved Thermal and Gas Flow Designs
• 2.5 Heat Transfer
• 2.6 Melt Convection
• 2.6.1 Free Convection
• 2.6.2 Crucible Rotation
• 2.6.3 Crystal Rotation
• 2.6.4 Marangoni Convection and Gas Shear
• 2.7 Magnetic Fields
• 2.7.1 Cusp Field
• 2.7.2 Transverse Field
• 2.7.3 Time-Dependent Fields
• 2.8 Hot Recharging and Continuous Feed
• 2.8.1 Hot Recharging
• 2.8.2 Charge Topping
• 2.8.3 Crucible Modifications
• 2.8.4 Continuous CZ Growth
• 2.9 Heavily n-Type Doped Silicon and Constitutional Supercooling
• 2.9.1 Constitutional Supercooling
• 2.9.2 Melting Point Depression
• 2.9.3 Origin of Dopant Gradient in the Melt
• 2.9.4 Path to Lower Resistivity
• 2.10 Growth of Large Diameter Crystals
• 2.10.1 Neck Growth for Large Crystals
• 2.10.2 Neck Extension
• 2.10.3 Additional Stresses on Neck
• 2.10.4 Crucible Wall Temperature
• 2.10.5 Double Layered Crucible Structure
• 2.10.6 Crucible Deformations
• 2.10.7 Intentional Devitrification
• 2.10.8 Transverse or Cusp Field for Very Large Crystals
• 2.10.9 Boosting Crystal Weight
• 2.10.10 Seed Chuck
• 2.10.11 Additional Challenges
• References
• Further Reading
• 3 Properties of Silicon Crystals
• 3.1 Dopants and Impurities
• 3.2 Typical Impurity Concentrations
• 3.3 Concentration of Dopants and Impurities in Axial Direction
• 3.4 Resistivity
• 3.5 Radial Variation of Impurities and Resistivity
• 3.6 Thermal Donors.
• 3.7 Defects in Silicon Crystals
• 3.8 Control of Vacancies, Interstitials, and the OISF Ring
• 3.9 Oxygen Precipitation
• 3.9.1 Oxygen Precipitation and Its Quality Effects
• 3.9.2 Dependence of Precipitation on Oxygen Level and Annealing Process
• 3.9.3 Bulk Microdefects
• 3.9.4 Oxygen Precipitation in Highly-doped Wafers
• 3.9.5 Effect of Precipitation on Lifetime and OISFs
• 3.10 Conclusions
• Acknowledgments
• References
• 4 Silicon Wafers: Preparation and Properties
• 4.1 Silicon Wafer Manufacturing Process
• 4.1.1 Ingot Cutting and Shaping
• 4.1.2 Wafering
• 4.1.2.1 ID Cutting
• 4.1.2.2 Wire Cutting
• 4.1.3 Wafer Marking
• 4.1.4 Edge Grinding
• 4.1.5 Lapping/Grinding
• 4.1.6 Chemical Etching
• 4.1.6.1 Donor Killing
• 4.1.7 Polishing
• 4.1.8 Clean Room Operations
• 4.2 Standard Measurements of Polished Wafers
• 4.2.1 Oxygen and Carbon Concentration
• 4.2.2 Metal Concentration Measurements
• 4.2.3 Resistivity
• 4.2.4 Wafer Geometry
• 4.2.5 Particles
• 4.2.6 Other Measurements
• 4.3 Sample Specifications of MEMS Wafers
• 4.4 Standards of Silicon Wafers
• References
• 5 Epi Wafers: Preparation and Properties
• 5.1 Silicon Epitaxy for MEMS
• 5.2 Silicon Epitaxy-The Basics
• 5.2.1 Surface Preparation
• 5.2.2 Silicon Precursors and Deposition Temperature
• 5.2.3 Choice of Doping Species
• 5.2.4 Choosing an Operating Pressure
• 5.3 The Epi-Poly Process
• 5.4 Etch Stop Layers
• 5.4.1 Heavily Boron Doped Epitaxial Etch Stop Layers
• 5.4.2 Pseudomorphic Epitaxial SiGe Etch Stop Layers
• 5.5 Epi on SOI Substrates
• 5.6 Selective Epitaxy and Epitaxial Layer Overgrowth
• 5.7 Considerations for Chemical Mechanical Polishing
• 5.8 Metrology
• 5.8.1 Measurement of Si Epi Layer Thickness
• 5.8.2 Measurement of Epi Layer Resistivity
• 5.8.3 Measurement of Ge in Si and SiGe Epi Layer Thickness.
• 5.8.4 Defectivity Measurements
• 5.8.5 Stress Measurements
• 5.9 Commercially Available Epitaxy Systems
• 5.9.1 Single Wafer Systems
• 5.9.2 Batch Systems
• 5.10 Summary
• References
• 6 Thin Films on Silicon
• 6.1 Thin Films on Silicon: Silicon Dioxide
• 6.1.1 Introduction
• 6.1.2 Growth Methods of Silicon Dioxide
• 6.1.2.1 Thermal Oxidation
• 6.1.2.1.1 Thermal Oxidation Processes
• 6.1.2.1.2 Consumption of Si During Oxidation
• 6.1.2.1.3 Dopant Effects
• 6.1.2.1.4 Chlorine Effects
• 6.1.2.1.5 Pressure Effects-HIPOX
• 6.1.2.1.6 Oxidation of Polysilicon
• 6.1.2.1.7 Stress in Silicon Dioxide
• 6.1.2.1.8 Oxidation-Induced Defects in Silicon
• 6.1.2.2 CVD Oxide Growth Methods
• 6.1.2.2.1 CVD Oxides
• 6.1.2.3 Multidimensional Effects
• 6.1.3 Structure and Properties of Silicon Dioxides
• 6.1.4 Processing of Silicon Dioxides
• 6.1.4.1 Cleaning
• 6.1.4.2 Etching
• References
• 6.2 Thin Films on Silicon: Silicon Nitride
• 6.2.1 Introduction
• 6.2.2 Growth of Silicon Nitride
• 6.2.2.1 Low Pressure Chemical Vapor Deposition
• 6.2.2.2 Plasma Enhanced Chemical Vapor Deposition
• 6.2.2.3 Other Methods
• 6.2.3 Structure and Properties of Silicon Nitride
• 6.2.3.1 Stoichiometry
• 6.2.3.2 Stress in Silicon Nitride
• 6.2.3.2.1 Low Stress Silicon Nitride
• 6.2.4 Processing of Silicon Nitride
• 6.2.4.1 Etching
• 6.2.4.1.1 Wet Etching
• 6.2.4.1.2 Dry Etching
• 6.2.4.2 Etch Mask and Etch Stop
• 6.2.4.3 Local Oxidation
• References
• 6.3 Thin Films on Silicon: Poly-SiGe for MEMS-Above-CMOS Applications
• 6.3.1 Introduction
• 6.3.2 Material Properties of Poly-SiGe
• 6.3.3 Poly-SiGe MEMS Manufacturing
• 6.3.3.1 Poly-SiGe Deposition Technology
• 6.3.3.2 Standard Manufacturing Process of a Poly-SiGe MEMS
• 6.3.4 SiGe MEMS Demonstrators
• 6.3.4.1 Pressure Sensors
• 6.3.4.2 Capacitive Micromachined Ultrasound Transducer.
• 6.3.4.3 Timing Devices
• 6.3.5 Conclusions and Future Poly-SiGe Research
• References
• 6.4 Thin Films on Silicon: ALD
• 6.4.1 Introduction
• 6.4.2 Operation Principles of ALD
• 6.4.3 ALD Processes and Materials
• 6.4.4 Characteristics of ALD Processes and Films
• 6.4.5 ALD Reactors
• 6.4.6 Summary
• References
• Further Reading
• 6.5 Piezoelectric Thin Film Materials for MEMS
• 6.5.1 Introduction
• 6.5.2 Short Introduction to Piezoelectric Theory and Important Thin Film Constants
• 6.5.3 AlN
• 6.5.3.1 Material Properties
• 6.5.3.2 Doped AlN
• 6.5.3.3 Deposition Methods
• 6.5.3.4 Process Integration and Application Areas
• 6.5.4 PZT
• 6.5.4.1 Material Composition
• 6.5.4.2 Choice of Electrode and Seeding
• 6.5.4.3 Deposition Methods
• 6.5.4.3.1 RF-Sputtering
• 6.5.4.3.2 Chemical Solution Deposition
• 6.5.4.3.3 Pulsed Laser Deposition
• 6.5.4.4 Process Integration
• 6.5.4.5 PiezoMEMS Application Areas
• 6.5.5 Other (Future?) Piezoelectric Materials for MEMS
• References
• 6.6 Metallic Glass Thin Films
• 6.6.1 Introduction
• 6.6.1.1 Lithography Issues
• 6.6.1.2 Materials Related Issues
• 6.6.2 Glassy/Amorphous Metals
• 6.6.3 Properties of Metallic Glasses Useful for MEMS
• 6.6.3.1 Superplastic Deformation of Metallic Glasses
• 6.6.3.2 Micro/Nano-Formability of Glassy Metals
• 6.6.4 Applications of Bulk Metallic Glasses in MEMS
• 6.6.5 Metallic Glass Thin Films-Pathway to Integrated MEMS
• 6.6.5.1 Deposition of Metallic Glass Thin Films
• 6.6.5.2 Compatibility with Other Materials
• 6.6.5.3 Effect of Nitrogen and Oxygen Poisoning
• 6.6.5.4 Mechanical Properties
• 6.6.5.5 Chemical Inertness
• 6.6.5.6 Tailorable Magnetic Properties
• 6.6.5.7 Biocompatibility
• 6.6.5.8 Micro/Nano-Fabrication Ability
• 6.6.5.9 3D Micro-Forming
• 6.6.6 Application of Metallic Glass Thin Films
• 6.6.6.1 Hydrogen Sensor.