Nonlinear transistor model parameter extraction techniques

Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.

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Bibliographic Details
Other Authors Rudolph, Matthias, 1969-, Fager, Christian, Root, David E.
Format Electronic eBook
LanguageEnglish
Published Cambridge, UK ; New York : Cambridge University Press, 2012.
SeriesCambridge RF and microwave engineering series.
Subjects
Transistors > Mathematical models.
Electronic circuit design.
elektronické knihy
electronic books
Online AccessFull text
ISBN9781139161268
1139161261
9781139014960
113901496X
1139157442
9781139157445
9781139154659
1139154656
9781139159210
1139159216
1283342359
9781283342353
9780521762106
0521762103
Physical Description1 online resource (xiv, 352 pages) : illustrations

Cover

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245 0 0 |a Nonlinear transistor model parameter extraction techniques /  |c edited by Matthias Rudolph, Christian Fager, David E. Root. 
260 |a Cambridge, UK ;  |a New York :  |b Cambridge University Press,  |c 2012. 
300 |a 1 online resource (xiv, 352 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a The Cambridge RF and microwave engineering series 
504 |a Includes bibliographical references and index. 
505 0 |a Cover; Nonlinear Transistor Model Parameter Extraction Techniques; The Cambridge RF and Microwave Engineering Series; Title; Copyright; Contents; List of contributors; Preface; 1 Introduction; 1.1 Model extraction challenges; 1.1.1 Accuracy; 1.1.1.1 Circuit application; 1.1.1.2 Measurement uncertainty; 1.1.1.3 Process variations; 1.1.2 Numerical convergence; 1.1.2.1 Breakdown; 1.1.2.2 Self-heating; 1.1.3 Choice of the modeling transistor; 1.2 Model extraction workflow; References; 2 DC and thermal modeling: III -- V FETs and HBTs; 2.1 Introduction; 2.2 Basic DC characteristics. 
505 8 |a 2.3 FET DC parameters and modeling2.4 HBT DC parameters and modeling; 2.5 Process control monitoring; 2.6 Thermal modeling overview; 2.7 Physics-based thermal scaling model for HBTs; 2.8 Measurement-based thermal model for FETs; 2.9 Transistor reliability evaluation; Acknowledgments; References; 3 Extrinsic parameter and parasitic elements in III -- V HBT and HEMT modeling; 3.1 Introduction; 3.2 Test structures with calibration and de-embedding; 3.3 Methods for extrinsic parameter extraction used in HBTs; 3.3.1 Equivalent circuit topology. 
505 8 |a 3.3.2 Physical description of contact resistances and overlap capacitances3.3.3 Extrinsic resistance and inductance extraction; 3.4 Methods for extrinsic parameter extraction used in HEMTs; 3.4.1 Cold FET technique; 3.4.2 Unbiased technique; 3.4.3 GaN HEMTs exceptions; 3.5 Scaling for multicell arrays; References; 4 Uncertainties in small-signal equivalent circuit modeling; 4.1 Introduction; 4.1.1 Sources of uncertainty in modeling; 4.1.2 Measurement uncertainty; 4.2 Uncertainties in direct extraction methods; 4.2.1 Simple direct extraction example; 4.2.1.1 Example circuit and measurements. 
505 8 |a 4.2.1.2 Uncertainty analysis4.2.1.3 Parameter estimation; 4.2.1.4 Parameter correlations; 4.2.2 Results using transistor measurements; 4.2.2.1 Uncertainty contributions; 4.2.2.2 Intrinsic model parameter sensitivities; 4.2.2.3 Intrinsic model parameter uncertainties; 4.2.2.4 Multibias extraction results; 4.3 Optimizer-based estimation techniques; 4.3.1 Maximum likelihood estimation; 4.3.1.1 Simple example; 4.3.1.2 MLE uncertainty; 4.3.2 MLE of small-signal transistor model parameters; 4.3.2.1 Parasitic parameter estimation; 4.3.2.2 Application to parasitic FET model extraction. 
505 8 |a 4.3.2.3 MLE of intrinsic model parameters4.3.2.4 Application to intrinsic FET model extraction; 4.3.3 Comparison between MLE and the direct extraction method; 4.3.4 Application of MLE in RF-CMOS de-embedding; 4.3.4.1 Method description; 4.3.4.2 Example using 130 nm RF-CMOS measurements; 4.3.4.3 Comparison between different de-embedding methods; 4.3.5 Discussion; 4.4 Complexity versus uncertainty in equivalent circuit modeling; 4.4.1 Finding an optimum model topology; 4.4.2 An illustrative example; 4.4.2.1 MSE estimation procedure; 4.4.2.2 Results; 4.5 Summary and discussion; References. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided. 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Transistors  |x Mathematical models. 
650 0 |a Electronic circuit design. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Rudolph, Matthias,  |d 1969-  |1 https://id.oclc.org/worldcat/entity/E39PCjGJffMrBXFmhgwRPMVqDC 
700 1 |a Fager, Christian. 
700 1 |a Root, David E. 
776 0 8 |i Print version:  |t Nonlinear transistor model parameter extraction techniques.  |d Cambridge, UK ; New York : Cambridge University Press, 2012  |z 9780521762106  |w (DLC) 2011027239  |w (OCoLC)721888726 
830 0 |a Cambridge RF and microwave engineering series. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpNTMPET02/nonlinear-transistor-model?kpromoter=marc  |y Full text 

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