Nonlinear transistor model parameter extraction techniques

Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.

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Bibliographic Details
Other Authors: Rudolph, Matthias, 1969-, Fager, Christian., Root, David E.
Format: eBook
Language: English
Published: Cambridge, UK ; New York : Cambridge University Press, 2012.
Series: Cambridge RF and microwave engineering series.
Subjects:
Transistors > Mathematical models.
Electronic circuit design.
elektronické knihy
electronic books
ISBN: 9781139161268
1139161261
9781139014960
113901496X
1139157442
9781139157445
9781139154659
1139154656
9781139159210
1139159216
1283342359
9781283342353
9780521762106
0521762103
Physical Description: 1 online resource (xiv, 352 pages) : illustrations

Cover

Table of contents

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020 |a 1139157442  |q (electronic bk.) 
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020 |a 9781139154659  |q (electronic bk.) 
020 |a 1139154656  |q (electronic bk.) 
020 |a 9781139159210 
020 |a 1139159216 
020 |a 1283342359 
020 |a 9781283342353 
020 |z 9780521762106 
020 |z 0521762103 
024 8 |a 9786613342355 
035 |a (OCoLC)773039086  |z (OCoLC)763159195  |z (OCoLC)765127834  |z (OCoLC)769266024  |z (OCoLC)816873473  |z (OCoLC)819631147  |z (OCoLC)1042942578  |z (OCoLC)1043674533  |z (OCoLC)1065851754  |z (OCoLC)1076629998  |z (OCoLC)1081229934  |z (OCoLC)1153469179 
245 0 0 |a Nonlinear transistor model parameter extraction techniques /  |c edited by Matthias Rudolph, Christian Fager, David E. Root. 
260 |a Cambridge, UK ;  |a New York :  |b Cambridge University Press,  |c 2012. 
300 |a 1 online resource (xiv, 352 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a The Cambridge RF and microwave engineering series 
504 |a Includes bibliographical references and index. 
505 0 |a Cover; Nonlinear Transistor Model Parameter Extraction Techniques; The Cambridge RF and Microwave Engineering Series; Title; Copyright; Contents; List of contributors; Preface; 1 Introduction; 1.1 Model extraction challenges; 1.1.1 Accuracy; 1.1.1.1 Circuit application; 1.1.1.2 Measurement uncertainty; 1.1.1.3 Process variations; 1.1.2 Numerical convergence; 1.1.2.1 Breakdown; 1.1.2.2 Self-heating; 1.1.3 Choice of the modeling transistor; 1.2 Model extraction workflow; References; 2 DC and thermal modeling: III -- V FETs and HBTs; 2.1 Introduction; 2.2 Basic DC characteristics. 
505 8 |a 2.3 FET DC parameters and modeling2.4 HBT DC parameters and modeling; 2.5 Process control monitoring; 2.6 Thermal modeling overview; 2.7 Physics-based thermal scaling model for HBTs; 2.8 Measurement-based thermal model for FETs; 2.9 Transistor reliability evaluation; Acknowledgments; References; 3 Extrinsic parameter and parasitic elements in III -- V HBT and HEMT modeling; 3.1 Introduction; 3.2 Test structures with calibration and de-embedding; 3.3 Methods for extrinsic parameter extraction used in HBTs; 3.3.1 Equivalent circuit topology. 
505 8 |a 3.3.2 Physical description of contact resistances and overlap capacitances3.3.3 Extrinsic resistance and inductance extraction; 3.4 Methods for extrinsic parameter extraction used in HEMTs; 3.4.1 Cold FET technique; 3.4.2 Unbiased technique; 3.4.3 GaN HEMTs exceptions; 3.5 Scaling for multicell arrays; References; 4 Uncertainties in small-signal equivalent circuit modeling; 4.1 Introduction; 4.1.1 Sources of uncertainty in modeling; 4.1.2 Measurement uncertainty; 4.2 Uncertainties in direct extraction methods; 4.2.1 Simple direct extraction example; 4.2.1.1 Example circuit and measurements. 
505 8 |a 4.2.1.2 Uncertainty analysis4.2.1.3 Parameter estimation; 4.2.1.4 Parameter correlations; 4.2.2 Results using transistor measurements; 4.2.2.1 Uncertainty contributions; 4.2.2.2 Intrinsic model parameter sensitivities; 4.2.2.3 Intrinsic model parameter uncertainties; 4.2.2.4 Multibias extraction results; 4.3 Optimizer-based estimation techniques; 4.3.1 Maximum likelihood estimation; 4.3.1.1 Simple example; 4.3.1.2 MLE uncertainty; 4.3.2 MLE of small-signal transistor model parameters; 4.3.2.1 Parasitic parameter estimation; 4.3.2.2 Application to parasitic FET model extraction. 
505 8 |a 4.3.2.3 MLE of intrinsic model parameters4.3.2.4 Application to intrinsic FET model extraction; 4.3.3 Comparison between MLE and the direct extraction method; 4.3.4 Application of MLE in RF-CMOS de-embedding; 4.3.4.1 Method description; 4.3.4.2 Example using 130 nm RF-CMOS measurements; 4.3.4.3 Comparison between different de-embedding methods; 4.3.5 Discussion; 4.4 Complexity versus uncertainty in equivalent circuit modeling; 4.4.1 Finding an optimum model topology; 4.4.2 An illustrative example; 4.4.2.1 MSE estimation procedure; 4.4.2.2 Results; 4.5 Summary and discussion; References. 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
520 |a Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided. 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Transistors  |x Mathematical models. 
650 0 |a Electronic circuit design. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Rudolph, Matthias,  |d 1969-  |1 https://id.oclc.org/worldcat/entity/E39PCjGJffMrBXFmhgwRPMVqDC 
700 1 |a Fager, Christian. 
700 1 |a Root, David E. 
776 0 8 |i Print version:  |t Nonlinear transistor model parameter extraction techniques.  |d Cambridge, UK ; New York : Cambridge University Press, 2012  |z 9780521762106  |w (DLC) 2011027239  |w (OCoLC)721888726 
830 0 |a Cambridge RF and microwave engineering series. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpNTMPET02/nonlinear-transistor-model?kpromoter=marc  |y Full text 

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