ISTFA 2010 : conference proceedings from the 36th International Symposium for Testing and Failure Analysis, November 14-18, 2010, InterContinental Hotel Dallas, Dallas, Texas, USA

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Bibliographic Details
Corporate Authors: International Symposium for Testing and Failure Analysis Dallas, Tex.), ASM International., Electronic Device Failure Analysis Society.
Format: eBook
Language: English
Published: Materials Park, Ohio : ASM International, 2010.
Subjects:
ISBN: 9781615037278
1615037276
9781680155105
1680155105
9780615030418
9781615030415
0615030416
Physical Description: 1 online resource (xix, 464 pages) : color illustrations

Cover

Table of contents

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111 2 |a International Symposium for Testing and Failure Analysis  |n (36th :  |d 2010 :  |c Dallas, Tex.) 
245 1 0 |a ISTFA 2010 :  |b conference proceedings from the 36th International Symposium for Testing and Failure Analysis, November 14-18, 2010, InterContinental Hotel Dallas, Dallas, Texas, USA /  |c sponsored by EDFAS--Electronic Device Failure Analysis Society, ISTFA/2010, ASM International. 
264 1 |a Materials Park, Ohio :  |b ASM International,  |c 2010. 
300 |a 1 online resource (xix, 464 pages) :  |b color illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
504 |a Includes bibliographical references and index. 
505 0 |a Contents -- Combining High-Resolution Pulsed TIVA and Nanoprobing Techniques to Identify Drive Strength Issues in Mixed-signal Circuits -- Laser Voltage Imaging: A new Perspective of Laser Voltage Probing -- Two-Photon X-Variation Mapping Based on a Diode-Pumped Femtosecond Laser -- Quantitative, nanoscale free-carrier concentration mapping using terahertz near-field nanoscopy -- Laser-Thermal Imaging -- Mobile Diffractive Solid Immersion Lens Design for Backside Laser Based Fault Localization -- Volume Electrical Failure Analysis for Product-Specific Yield Enhancement 
505 8 |a Case Study in Fault Isolation of a Metal Short for Yield EnhancementFailure Analysis Methodology on Systematic defect in ADC_PLL Ring Pattern due to Plasma De-chuck Process -- Fault Isolation of Sub-surface Leakage Defects Using Electron Beam Induced Current Characterization in Next-Generation Flash Memory Technology Development -- A case study: Observation of counter doping of gate poly and its validation in high density 90nm CMOS SRAM Bitcell -- Magnetic Microscopy for 3D structures: use of the Simulation Approach for the precise localization of deep buried weak currents 
505 8 |a Advanced Sample Preparation Method for Lead Free Bump IMC and Solder Grain Image EnhancementExtending Acoustic Microscopy for Comprehensive Failure Analysis Applications -- Process induced defects in the silicon substrate: Approaches for successful Failure Analysis. -- X-sectional Scanning Capacitance Microscopy (SCM) Applications on Deep Submicron Devices at Specific Sites -- High Volume and Fast Turnaround Automated Inline TEM Sample Preparation for Manufacturing Process Monitoring -- Backscattered Electron Imaging for Embedded Subtle Defects in 32nm Processes 
505 8 |a Semi-Automated Full Wafer In-line SRAM Failure Analysis By Dual Beam Focused Ion Beam (FIB)Simulation Studies of Fluorine-induced Corrosion and Defects on Microchip Al Bondpads in Wafer Fabrication -- A Novel Wet Etch In-situ Decapsulation of Devices on Boards -- Low Temperature Plasma Decapsulation of Copper-wire-bonded and Exposed Copper Metallization Devices -- Decapsulation of Copper Bonded Plastic Encapsulated Integrated Circuits Utilizing Laser Ablation and Mixed Acid Chemistry 
505 8 |a Photoluminescence and EBIC for Process Control and Failure Analysis in Si-Based PhotovoltaicsCombined electron beam induced current imaging (EBIC) and focused ion beam (FIB) techniques for thin film solar cell characterization -- Activation Energy Analysis of Dark and Laser Illuminated I-V Characteristics of Thin-film Poly Silicon Solar Cells -- Characterization and failure analysis of 3D integrated semiconductor devices-novel tools for fault isolation, target preparation and high resolution material analysis -- A Novel Junction Profiling Methodology 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty 
590 |a Knovel  |b Knovel (All titles) 
650 0 |a Electronics  |x Materials  |x Testing  |v Congresses. 
650 0 |a Electronic apparatus and appliances  |x Testing  |v Congresses. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
710 2 |a ASM International. 
710 2 |a Electronic Device Failure Analysis Society. 
856 4 0 |u https://proxy.k.utb.cz/login?url=https://app.knovel.com/hotlink/toc/id:kpISTFACP1/istfa-2010-conference?kpromoter=marc  |y Full text